Ponencia
Characterization of electrical crosstalk in 4T-APS arrays using TCAD simulations
Autor/es | López Martínez, Juan Manuel
Carmona Galán, Ricardo Rodríguez Vázquez, Ángel Benito |
Departamento | Universidad de Sevilla. Departamento de Electrónica y Electromagnetismo |
Fecha de publicación | 2017 |
Fecha de depósito | 2019-11-19 |
Publicado en |
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ISBN/ISSN | 978-1-5090-6508-0 |
Resumen | TCAD simulations have been conducted on a CMOS image sensor in order to characterize the electrical component of the crosstalk between pixels through the study of the electric field distribution. The image sensor consists ... TCAD simulations have been conducted on a CMOS image sensor in order to characterize the electrical component of the crosstalk between pixels through the study of the electric field distribution. The image sensor consists on a linear array of five pinned photodiodes (PPD) with their transmission gates, floating diffusion and reset transistors. The effect of the variations of the thickness of the epitaxial layer has been addressed as well. In fact, the depth of the boundary of the epitaxial layer affects quantum efficiency (QE) so a correlation with crosstalk has been identified. |
Identificador del proyecto | TEC2015-66878-C3-1R
TIC 2012-2338 N000141410355 |
Cita | López Martínez, J.M., Carmona Galán, R. y Rodríguez Vázquez, Á.B. (2017). Characterization of electrical crosstalk in 4T-APS arrays using TCAD simulations. En 13th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME) (237-240), Giardini Naxos, Italia: Institute of Electrical and Electronics Engineers. |
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