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Characterization of electrical crosstalk in 4T-APS arrays using TCAD simulations

dc.creatorLópez Martínez, Juan Manueles
dc.creatorCarmona Galán, Ricardoes
dc.creatorRodríguez Vázquez, Ángel Benitoes
dc.date.accessioned2019-11-19T15:31:42Z
dc.date.available2019-11-19T15:31:42Z
dc.date.issued2017
dc.identifier.citationLópez Martínez, J.M., Carmona Galán, R. y Rodríguez Vázquez, Á.B. (2017). Characterization of electrical crosstalk in 4T-APS arrays using TCAD simulations. En 13th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME) (237-240), Giardini Naxos, Italia: Institute of Electrical and Electronics Engineers.
dc.identifier.isbn978-1-5090-6508-0es
dc.identifier.urihttps://hdl.handle.net/11441/90337
dc.description.abstractTCAD simulations have been conducted on a CMOS image sensor in order to characterize the electrical component of the crosstalk between pixels through the study of the electric field distribution. The image sensor consists on a linear array of five pinned photodiodes (PPD) with their transmission gates, floating diffusion and reset transistors. The effect of the variations of the thickness of the epitaxial layer has been addressed as well. In fact, the depth of the boundary of the epitaxial layer affects quantum efficiency (QE) so a correlation with crosstalk has been identified.es
dc.description.sponsorshipMinisterio de Economía y Competitividad TEC2015-66878-C3-1Res
dc.description.sponsorshipJunta de Andalucía TIC 2012-2338es
dc.description.sponsorshipOffice of Naval Research (USA) N000141410355es
dc.formatapplication/pdfes
dc.language.isoenges
dc.publisherInstitute of Electrical and Electronics Engineerses
dc.relation.ispartof13th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME) (2017), p 237-240
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internacional*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.subjectCMOSes
dc.subjectCMOS image sensors (CIS)es
dc.subjectActive pixel sensor (APS)es
dc.subjectPinned photodiode (PPD)es
dc.subjectCrosstalkes
dc.subjectEpitaxial layeres
dc.subjectTCAD simulationes
dc.titleCharacterization of electrical crosstalk in 4T-APS arrays using TCAD simulationses
dc.typeinfo:eu-repo/semantics/conferenceObjectes
dcterms.identifierhttps://ror.org/03yxnpp24
dc.type.versioninfo:eu-repo/semantics/acceptedVersiones
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses
dc.contributor.affiliationUniversidad de Sevilla. Departamento de Electrónica y Electromagnetismoes
dc.relation.projectIDTEC2015-66878-C3-1Res
dc.relation.projectIDTIC 2012-2338es
dc.relation.projectIDN000141410355es
dc.relation.publisherversionhttps://doi.org/10.1109/PRIME.2017.7974151es
dc.identifier.doi10.1109/PRIME.2017.7974151es
idus.format.extent4 p.es
dc.publication.initialPage237es
dc.publication.endPage240es
dc.eventtitle13th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)es
dc.eventinstitutionGiardini Naxos, Italiaes

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