Ponencia
CMOS SPADs selection, modeling and characterization towards image sensors implementation
Autor/es | Moreno García, Manuel
Guerra Vinuesa, Oscar Río Fernández, Rocío del Pérez Verdú, Belén Rodríguez Vázquez, Ángel Benito |
Departamento | Universidad de Sevilla. Departamento de Electrónica y Electromagnetismo |
Fecha de publicación | 2012 |
Fecha de depósito | 2019-11-26 |
Publicado en |
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ISBN/ISSN | 978-1-4673-1260-8 |
Resumen | The selection, modeling and characterization of Single Photon Avalanche Diodes (SPADs) are presented. Working with the standard 180nm UMC CMOS process, different SPAD structures are proposed in combination with several ... The selection, modeling and characterization of Single Photon Avalanche Diodes (SPADs) are presented. Working with the standard 180nm UMC CMOS process, different SPAD structures are proposed in combination with several quenching circuits in order to compare their relative performances. Various configurations for the active region and the prevention of the premature edge breakdown are tested, looking for a miniaturization of the devices to implement image sensor arrays without loses in their performance. |
Cita | Moreno García, M., Guerra Vinuesa, O., Río Fernández, R.d., Pérez Verdú, B. y Rodríguez Vázquez, Á.B. (2012). CMOS SPADs selection, modeling and characterization towards image sensors implementation. En 19th IEEE International Conference on Electronics, Circuits, and Systems (ICECS 2012) (332-335), Sevilla, España: Institute of Electrical and Electronics Engineers. |
Ficheros | Tamaño | Formato | Ver | Descripción |
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CMOS SPADs Selection.pdf | 1.252Mb | [PDF] | Ver/ | |