Enhanced Linearity in FD-SOI CMOS Body-Input Analog Circuits - Application to Voltage-Controlled Ring Oscillators and Frequency-Based sigma Delta ADCs

Abstract

Abstract— This paper investigates the use of the body terminal of MOS transistors to improve the linearity of some key circuits used to implement analog and mixed-signal circuits integrated in Fully Depleted Silicon on Insulator (FD-SOI) CMOS. This technology allows to increase the body factor with respect to conventional (bulk) CMOS processes. This effect is analyzed in basic analog building blocks – such as switches, simple-stage transconductors and Voltage-Controlled Ring Oscillators (VCROs). Approximated expressions are derived for the nonlinear characteristics and harmonic distortion of some of these circuits. As an application, transistor-level simulations of two VCRO-based modulators designed in a 28-nm FD-SOI CMOS technology are shown in order to demonstrate the benefits of the presented techniques.