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A versatile CMOS transistor array IC for the statistical characterization of time-zero variability, RTN, BTI, and HCI

 

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Opened Access A versatile CMOS transistor array IC for the statistical characterization of time-zero variability, RTN, BTI, and HCI
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Author: Díaz Fortuny, Javier
Martín Martínez, Javier
Rodríguez Martínez, Rosana
Castro López, Rafael
Roca Moreno, Elisenda
Fernández Fernández, Francisco Vidal
Aragonès Cervera, Xavier
Barajas Ojeda, Enrique
Mateo Peña, Diego
Nafría Maqueda, Montserrat
Department: Universidad de Sevilla. Departamento de Electrónica y Electromagnetismo
Date: 2018-01-01
Published in: IEEE journal of solid-state circuits, 54 (2), 476-488.
Document type: Article
Abstract: Statistical characterization of CMOS transistor variability phenomena in modern nanometer technologies is key for accurate end-of-life prediction. This paper presents a novel CMOS transistor array chip to statistically characterize the effects of se...
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Cite: Díaz Fortuny, J., Martín Martínez, J., Rodríguez Martínez, R., Castro López, R., Roca Moreno, E., Fernández Fernández, F.V.,...,Nafría Maqueda, M. (2018). A versatile CMOS transistor array IC for the statistical characterization of time-zero variability, RTN, BTI, and HCI. IEEE journal of solid-state circuits, 54 (2), 476-488.
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URI: https://hdl.handle.net/11441/86493

DOI: 10.1109/JSSC.2018.2881923

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