Artículo
Ultra-High-Resistance Pseudo-Resistors With Small Variations in a Wide Symmetrical Input Voltage Swing
Autor/es | Karami Horestani, Fatemeh
Rosa Utrera, José Manuel de la |
Departamento | Universidad de Sevilla. Departamento de Electrónica y Electromagnetismo |
Fecha de publicación | 2023 |
Fecha de depósito | 2023-12-19 |
Publicado en |
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Resumen | This brief presents a new strategy and circuit configuration composed of serially-connected PMOS devices operating
in the subthreshold region for implementing ultra-high-value
resistors required in very low-frequency ... This brief presents a new strategy and circuit configuration composed of serially-connected PMOS devices operating in the subthreshold region for implementing ultra-high-value resistors required in very low-frequency active-RC filters and bio-amplifiers. Depending on the application, signal bandwidth for instance in bio-amplifiers may vary from a few mHz up to a maximum of 10 kHz. Three different resistor structures are proposed to achieve ultra-high resistance. While ranging in the order of several T, the proposed ultra-high-resistance pseudoresistors occupy a small on-chip silicon area, which is one of the main issues in the design of analog front-end circuits in ultra-low power implantable biomedical microsystems. In addition, these ultra-high-value resistors lead to the use of a small capacitance to create a very small cut-off frequency. Therefore, the large area to implement capacitances is also considerably reduced. The proposed resistor structures have very small variations about 7% and 12% in a wide input voltage range (−0.5 V∼+0.5 V), thus significantly improving the total harmonic distortion of bioamplifiers and the analog front-end of the system. Simulation results of different circuits designed in a 180nm CMOS technology, are shown to demonstrate the advantages of the proposed ultra-high-resistance pseudo-resistors. |
Cita | Karami Horestani, F. y Rosa Utrera, J.M.d.l. (2023). Ultra-High-Resistance Pseudo-Resistors With Small Variations in a Wide Symmetrical Input Voltage Swing. IEEE Transactions on Circuits and Systems II: Express Briefs, 70 (8), 2794-2798. https://doi.org/10.1109/TCSII.2023.3258880. |
Ficheros | Tamaño | Formato | Ver | Descripción |
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Kara23_postprint.pdf | 1023.Kb | [PDF] | Ver/ | Versión aceptada |
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