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Artículo
Ultra-High-Resistance Pseudo-Resistors With Small Variations in a Wide Symmetrical Input Voltage Swing
dc.creator | Karami Horestani, Fatemeh | es |
dc.creator | Rosa Utrera, José Manuel de la | es |
dc.date.accessioned | 2023-12-19T10:07:09Z | |
dc.date.available | 2023-12-19T10:07:09Z | |
dc.date.issued | 2023 | |
dc.identifier.citation | Karami Horestani, F. y Rosa Utrera, J.M.d.l. (2023). Ultra-High-Resistance Pseudo-Resistors With Small Variations in a Wide Symmetrical Input Voltage Swing. IEEE Transactions on Circuits and Systems II: Express Briefs, 70 (8), 2794-2798. https://doi.org/10.1109/TCSII.2023.3258880. | |
dc.identifier.issn | 1549-7747 | es |
dc.identifier.issn | 1558-3791 | es |
dc.identifier.uri | https://hdl.handle.net/11441/152676 | |
dc.description.abstract | This brief presents a new strategy and circuit configuration composed of serially-connected PMOS devices operating in the subthreshold region for implementing ultra-high-value resistors required in very low-frequency active-RC filters and bio-amplifiers. Depending on the application, signal bandwidth for instance in bio-amplifiers may vary from a few mHz up to a maximum of 10 kHz. Three different resistor structures are proposed to achieve ultra-high resistance. While ranging in the order of several T, the proposed ultra-high-resistance pseudoresistors occupy a small on-chip silicon area, which is one of the main issues in the design of analog front-end circuits in ultra-low power implantable biomedical microsystems. In addition, these ultra-high-value resistors lead to the use of a small capacitance to create a very small cut-off frequency. Therefore, the large area to implement capacitances is also considerably reduced. The proposed resistor structures have very small variations about 7% and 12% in a wide input voltage range (−0.5 V∼+0.5 V), thus significantly improving the total harmonic distortion of bioamplifiers and the analog front-end of the system. Simulation results of different circuits designed in a 180nm CMOS technology, are shown to demonstrate the advantages of the proposed ultra-high-resistance pseudo-resistors. | es |
dc.format | application/pdf | es |
dc.format.extent | 5 p. | es |
dc.language.iso | eng | es |
dc.publisher | Institute of Electrical and Electronics Engineers | es |
dc.relation.ispartof | IEEE Transactions on Circuits and Systems II: Express Briefs, 70 (8), 2794-2798. | |
dc.subject | MOST-based resistors | es |
dc.subject | low-voltage | es |
dc.subject | low-power biomedical systems | es |
dc.title | Ultra-High-Resistance Pseudo-Resistors With Small Variations in a Wide Symmetrical Input Voltage Swing | es |
dc.type | info:eu-repo/semantics/article | es |
dcterms.identifier | https://ror.org/03yxnpp24 | |
dc.type.version | info:eu-repo/semantics/acceptedVersion | es |
dc.contributor.affiliation | Universidad de Sevilla. Departamento de Electrónica y Electromagnetismo | es |
dc.relation.publisherversion | https://dx.doi.org/10.1109/TCSII.2023.3258880 | es |
dc.identifier.doi | 10.1109/TCSII.2023.3258880 | es |
dc.journaltitle | IEEE Transactions on Circuits and Systems II: Express Briefs | es |
dc.publication.volumen | 70 | es |
dc.publication.issue | 8 | es |
dc.publication.initialPage | 2794 | es |
dc.publication.endPage | 2798 | es |
Ficheros | Tamaño | Formato | Ver | Descripción |
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Kara23_postprint.pdf | 1023.Kb | ![]() | Ver/ | Versión aceptada |
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