Ponencia
A Physical Interpretation of the Distance Term in Pelgrom’s Mismatch Model results in very Efficient CAD
Autor/es | Linares Barranco, Bernabé
Serrano Gotarredona, María Teresa |
Departamento | Universidad de Sevilla. Departamento de Arquitectura y Tecnología de Computadores |
Fecha de publicación | 2007 |
Fecha de depósito | 2020-09-30 |
Publicado en |
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ISBN/ISSN | 1-4244-0920-9 0271-4302 |
Resumen | In 1989 Pelgrom et al. published a mismatch
model for MOS transistors, where the standard
quadratic deviation of the mismatch in a parameter
between two identical transistors, is given by two
independent terms: (1) a ... In 1989 Pelgrom et al. published a mismatch model for MOS transistors, where the standard quadratic deviation of the mismatch in a parameter between two identical transistors, is given by two independent terms: (1) a transistor size-dependent term and (2) an inter-transistor distance-dependent term. To include the distance term, some researchers have developed CAD tools based on the so called σ-Space Methodology, which result in very computationally expensive algorithms. Such algorithms become non-viable even for circuits with a reduced number of transistors. On the other hand, by understanding and interpreting correctly the physical origin of Pelgrom’s model distance term, one can implement in a straight forward manner this mismatch contribution in a CAD tool. Furthermore, the computational cost results negligible and viable for any number of transistors. |
Cita | Linares Barranco, B. y Serrano Gotarredona, M.T. (2007). A Physical Interpretation of the Distance Term in Pelgrom’s Mismatch Model results in very Efficient CAD. En ISCAS 2007: IEEE International Symposium on Circuits and Systems (1561-1564), New Orleans, LO, USA: IEEE Computer Society. |
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