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Listar por autor "Molina Rubio, Sergio Ignacio"
Mostrando ítems 1-4 de 4
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Artículo
High resolution electron microscopy of GaAs capped GaSb nanostructures
Molina Rubio, Sergio Ignacio; Beltrán, Ana M.; Ben Fernández, Teresa; Galindo Riaño, Pedro Luis; Guerrero Vázquez, Elisa; Taboada, Alfonso G.; Chisholm, Matthew F.; Ripalda, José María (American Institute of Physics, 2009-01)We show in this work that GaAs capping of 2 ML of GaSb grown by molecular beam epitaxy results in the formation of very ...
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Artículo
Incorporation of Sb in InAs/GaAs quantum dots
Molina Rubio, Sergio Ignacio; Sánchez, A. M.; Beltrán, Ana M.; Sales, David L.; Ben Fernández, Teresa; Chisholm, M. F.; Varela, María; Pennycook, Stephen J.; Galindo Riaño, Pedro Luis; Papworth, A. J.; Goodhew, P. J.; Ripalda, José María (American Institute of Physics, 2007)The formation of a quaternary InGaAsSb alloy is shown to occur in the core of epitaxial GaSb capped InAs/GaAs quantum dots ...
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Artículo
Quantitative study of the interfacial intermixing and segregation effects across the wetting layer of Ga(As,Sb)-capped InAs quantum dots
Luna, Esperanza; Beltrán, Ana M.; Sánchez, Ana M.; Molina Rubio, Sergio Ignacio (American Institute of Physics, 2012-07)Quantitative chemical information from semiconductor nanostructures is of primary importance, in particular at interfaces. ...
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Artículo
Theoretical modelling of quaternary GaInAsSb/GaAs self-assembled quantum dots
Llorens Montolio, José Manuel; Taboada, Alfonso G.; Ripalda, José María; Alonso-Álvarez, Diego; Alén, Benito; Martín-Sánchez, Javier; García Martínez, Jorge Manuel; González Díez, Yolanda; Sánchez, A. M.; Beltrán, Ana M.; Galindo Riaño, Pedro L.; Molina Rubio, Sergio Ignacio (Institute of Physics Publishing, 2010)InAs/GaAs quantum dots exposed to Sb after growth exhibit spectral changes. We study in the present paper an idealized ...