Artículo
Quantitative study of the interfacial intermixing and segregation effects across the wetting layer of Ga(As,Sb)-capped InAs quantum dots
Autor/es | Luna, Esperanza
Beltrán, Ana M. Sánchez, Ana M. Molina Rubio, Sergio Ignacio |
Departamento | Universidad de Sevilla. Departamento de Ingeniería y Ciencia de los Materiales y del Transporte |
Fecha de publicación | 2012-07 |
Fecha de depósito | 2023-11-07 |
Publicado en |
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Resumen | Quantitative chemical information from semiconductor nanostructures is of primary importance, in
particular at interfaces. Using a combination of analytical transmission electron microscopy
techniques, we are able to ... Quantitative chemical information from semiconductor nanostructures is of primary importance, in particular at interfaces. Using a combination of analytical transmission electron microscopy techniques, we are able to quantify the interfacial intermixing and surface segregation across the intricate non-common-atom wetting layer (WL) of Ga(As,Sb)-capped InAs quantum dots. We find: (i) the WL-on-GaAs(buffer) interface is abrupt and perfectly defined by sigmoidal functions, in analogy with two-dimensional epitaxial layers, suggesting that the interface formation process is similar in both cases; (ii) indium segregation is the prevailing mechanism (e.g., over antimony segregation), which eventually determines the composition profile across the GaAs(cap)-on-WL interface. |
Agencias financiadoras | The Spanish MCI Project TEC2008-06756-C03-02/TEC The Spanish MCI Project TEC2011-29120-C05-03 Junta de Andalucía, PAI research group and UE-FEDER TEP120 Project P08-TEP-03516 |
Identificador del proyecto | TEC2008-06756-C03-02/TEC
TEC2011-29120-C05-03 P08-TEP-03516 |
Cita | Luna, E., Beltrán, A.M., Sánchez, A.M. y Molina Rubio, S.I. (2012). Quantitative study of the interfacial intermixing and segregation effects across the wetting layer of Ga(As,Sb)-capped InAs quantum dots. Applied Physics Letters, 101 (011601). https://doi.org/10.1063/1.4731790. |
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