dc.creator | Luna, Esperanza | es |
dc.creator | Beltrán, Ana M. | es |
dc.creator | Sánchez, Ana M. | es |
dc.creator | Molina Rubio, Sergio Ignacio | es |
dc.date.accessioned | 2023-11-07T10:59:31Z | |
dc.date.available | 2023-11-07T10:59:31Z | |
dc.date.issued | 2012-07 | |
dc.identifier.citation | Luna, E., Beltrán, A.M., Sánchez, A.M. y Molina Rubio, S.I. (2012). Quantitative study of the interfacial intermixing and segregation effects across the wetting layer of Ga(As,Sb)-capped InAs quantum dots. Applied Physics Letters, 101 (011601). https://doi.org/10.1063/1.4731790. | |
dc.identifier.issn | 0003-6951 | es |
dc.identifier.issn | 1077-3118 | es |
dc.identifier.uri | https://hdl.handle.net/11441/150239 | |
dc.description.abstract | Quantitative chemical information from semiconductor nanostructures is of primary importance, in
particular at interfaces. Using a combination of analytical transmission electron microscopy
techniques, we are able to quantify the interfacial intermixing and surface segregation across the
intricate non-common-atom wetting layer (WL) of Ga(As,Sb)-capped InAs quantum dots. We find:
(i) the WL-on-GaAs(buffer) interface is abrupt and perfectly defined by sigmoidal functions, in
analogy with two-dimensional epitaxial layers, suggesting that the interface formation process is
similar in both cases; (ii) indium segregation is the prevailing mechanism (e.g., over antimony
segregation), which eventually determines the composition profile across the GaAs(cap)-on-WL
interface. | es |
dc.format | application/pdf | es |
dc.format.extent | 4 p. | es |
dc.language.iso | eng | es |
dc.publisher | American Institute of Physics | es |
dc.relation.ispartof | Applied Physics Letters, 101 (011601). | |
dc.rights | Attribution-NonCommercial-NoDerivatives 4.0 Internacional | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/4.0/ | * |
dc.subject | Superlattices | es |
dc.subject | Heterostructures | es |
dc.subject | Epitaxy | es |
dc.subject | Materials treatment | es |
dc.subject | Transmission electron microscopy | es |
dc.subject | Semiconductor nanostructures | es |
dc.subject | Chemical elements | es |
dc.subject | Solid solid interfaces | es |
dc.subject | Chemical analysis | es |
dc.subject | Chemical properties | es |
dc.title | Quantitative study of the interfacial intermixing and segregation effects across the wetting layer of Ga(As,Sb)-capped InAs quantum dots | es |
dc.type | info:eu-repo/semantics/article | es |
dcterms.identifier | https://ror.org/03yxnpp24 | |
dc.type.version | info:eu-repo/semantics/publishedVersion | es |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | es |
dc.contributor.affiliation | Universidad de Sevilla. Departamento de Ingeniería y Ciencia de los Materiales y del Transporte | es |
dc.relation.projectID | TEC2008-06756-C03-02/TEC | es |
dc.relation.projectID | TEC2011-29120-C05-03 | es |
dc.relation.projectID | P08-TEP-03516 | es |
dc.relation.publisherversion | https://pubs.aip.org/aip/apl/article/101/1/011601/126373/Quantitative-study-of-the-interfacial-intermixing | es |
dc.identifier.doi | 10.1063/1.4731790 | es |
dc.contributor.group | Universidad de Sevilla. TEP123: Metalurgia e Ingeniería de los Materiales | es |
dc.journaltitle | Applied Physics Letters | es |
dc.publication.volumen | 101 | es |
dc.publication.issue | 011601 | es |
dc.contributor.funder | The Spanish MCI Project TEC2008-06756-C03-02/TEC | es |
dc.contributor.funder | The Spanish MCI Project TEC2011-29120-C05-03 | es |
dc.contributor.funder | Junta de Andalucía, PAI research group and UE-FEDER TEP120 Project P08-TEP-03516 | es |