Article
Theoretical modelling of quaternary GaInAsSb/GaAs self-assembled quantum dots
| Author/s | Llorens Montolio, José Manuel
Taboada, Alfonso G. Ripalda, José María Alonso-Álvarez, Diego Alén, Benito Martín-Sánchez, Javier García Martínez, Jorge Manuel González Díez, Yolanda Sánchez, A. M. Beltrán, Ana M. 
Galindo Riaño, Pedro L. Molina Rubio, Sergio Ignacio |
| Department | Universidad de Sevilla. Departamento de Ingeniería y Ciencia de los Materiales y del Transporte |
| Date | 2010 |
| Published in |
|
| Abstract | InAs/GaAs quantum dots exposed to Sb after growth exhibit spectral changes. We study in the present paper an idealized nanostructure consisting of a homogeneous distribution of the quaternary GaInAsSb surrounded by a barrier ... |
| Project ID. | TEC2008-06756-C03-01/02/TEC
CSD2006-0019
CSD2009-00013
P08-TEP-03516
S2009ESP-150 |
| Citation | Llorens Montolio, J.M., Taboada, A.G., Ripalda, J.M., Alonso-Álvarez, D., Alén, B., Martín-Sánchez, J.,...,Molina Rubio, S.I. (2010). Theoretical modelling of quaternary GaInAsSb/GaAs self-assembled quantum dots. Journal of Physics: Conference Series, 245 (1) |
: 
| Files | Size | Format | View | Description |
|---|---|---|---|---|
| JofP_beltran_2010_theoretical.pdf | 602.9Kb | 
[PDF]
| View/ | |
http://hdl.handle.net/11441/68335
https://doi.org/10.1088/1742-6596/245/1/012081This item appears in the following collection(s)
Except where otherwise noted, this item's license is described as: Attribution-NonCommercial-NoDerivatives 4.0 Internacional