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Theoretical modelling of quaternary GaInAsSb/GaAs self-assembled quantum dots

dc.creatorLlorens Montolio, José Manueles
dc.creatorTaboada, Alfonso G.es
dc.creatorRipalda, José Maríaes
dc.creatorAlonso-Álvarez, Diegoes
dc.creatorAlén, Benitoes
dc.creatorMartín-Sánchez, Javieres
dc.creatorGarcía Martínez, Jorge Manueles
dc.creatorGonzález Díez, Yolandaes
dc.creatorSánchez, A. M.es
dc.creatorBeltrán, Ana M.es
dc.creatorGalindo Riaño, Pedro L.es
dc.creatorMolina Rubio, Sergio Ignacioes
dc.date.accessioned2018-01-05T11:40:21Z
dc.date.available2018-01-05T11:40:21Z
dc.date.issued2010
dc.identifier.citationLlorens Montolio, J.M., Taboada, A.G., Ripalda, J.M., Alonso-Álvarez, D., Alén, B., Martín-Sánchez, J.,...,Molina Rubio, S.I. (2010). Theoretical modelling of quaternary GaInAsSb/GaAs self-assembled quantum dots. Journal of Physics: Conference Series, 245 (1)
dc.identifier.issn1742-6588es
dc.identifier.issn1742-6596es
dc.identifier.urihttp://hdl.handle.net/11441/68335
dc.description.abstractInAs/GaAs quantum dots exposed to Sb after growth exhibit spectral changes. We study in the present paper an idealized nanostructure consisting of a homogeneous distribution of the quaternary GaInAsSb surrounded by a barrier of GaAs. We find that the valence band offset is a critical parameter in modelling its electronic structure. Depending on this value, we predict a transition from type-I to type-II band alignment at a different Sb concentration. The addition of Sb to reduce the transition energy while keeping a type-I alignment is only of benefit at low Sb concentration.es
dc.description.sponsorshipMICINN projects TEC2008-06756-C03-01/02/TECes
dc.description.sponsorshipMICINN CONSOLIDER INGENIO 2010 CSD2006-0019 and CSD2009-00013es
dc.description.sponsorshipJunta de Andalucía PAI research groups TEP-120 and TIC-145 project P08-TEP-03516es
dc.description.sponsorshipComunidad Autónoma de Madrid S2009ESP-150es
dc.formatapplication/pdfes
dc.language.isoenges
dc.publisherInstitute of Physics Publishinges
dc.relation.ispartofJournal of Physics: Conference Series, 245 (1)
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internacional*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.titleTheoretical modelling of quaternary GaInAsSb/GaAs self-assembled quantum dotses
dc.typeinfo:eu-repo/semantics/articlees
dc.type.versioninfo:eu-repo/semantics/publishedVersiones
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses
dc.contributor.affiliationUniversidad de Sevilla. Departamento de Ingeniería y Ciencia de los Materiales y del Transportees
dc.relation.projectIDTEC2008-06756-C03-01/02/TECes
dc.relation.projectIDCSD2006-0019es
dc.relation.projectIDCSD2009-00013es
dc.relation.projectIDP08-TEP-03516es
dc.relation.projectIDS2009ESP-150es
dc.relation.publisherversionhttp://iopscience.iop.org/article/10.1088/1742-6596/245/1/012081es
dc.identifier.doi10.1088/1742-6596/245/1/012081
dc.contributor.groupUniversidad de Sevilla. TEP123: Metalurgia e Ingeniería de los Materialeses
idus.format.extent4 p.es
dc.journaltitleJournal of Physics: Conference Serieses
dc.publication.volumen245es
dc.publication.issue1es
dc.identifier.sisius21147742es

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