Artículo
High resolution electron microscopy of GaAs capped GaSb nanostructures
Autor/es | Molina Rubio, Sergio Ignacio
Beltrán, Ana M. Ben Fernández, Teresa Galindo Riaño, Pedro Luis Guerrero Vázquez, Elisa Taboada, Alfonso G. Chisholm, Matthew F. Ripalda, José María |
Departamento | Universidad de Sevilla. Departamento de Ingeniería y Ciencia de los Materiales y del Transporte |
Fecha de publicación | 2009-01 |
Fecha de depósito | 2023-11-09 |
Publicado en |
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Resumen | We show in this work that GaAs capping of 2 ML of GaSb grown by molecular beam epitaxy results in the formation of very small with heights of about 1 nm GaAsₓxSb₁₋ₓ nanostructures surrounded by a GaAs rich layer. This ... We show in this work that GaAs capping of 2 ML of GaSb grown by molecular beam epitaxy results in the formation of very small with heights of about 1 nm GaAsₓxSb₁₋ₓ nanostructures surrounded by a GaAs rich layer. This conclusion is obtained by analyzing the morphology of the GaAsₓxSb₁₋ₓ nanostructures by high resolution scanning transmission electron microscopy in Z-contrast mode. This result shows that a significant fraction of the Sb atoms must segregate along the growth direction during the GaAs capping process. |
Agencias financiadoras | SANDiE European Network of Excellence Contract No. NMP4-CT-2004-500101 The Spanish MEC Grant No. TEC2005-05781-C03-01 The Spanish MEC Grant No. TEC2005-05781-C03-02 The Spanish MEC Grant No. TEC2008-06756-C03-02/TEC The Spanish MEC Grant No. NAN2004-09109-C04-01 Consolider-Ingenio 2010 CSD2006-00019 The CAM Grant No. S 0505ESP 0200 Junta de Andalucía project PAI05-TEP-00383 Junta de Andalucía project PAI05-TEP-03516 |
Identificador del proyecto | NMP4-CT-2004-500101
TEC2005-05781-C03-01 TEC2005-05781-C03-02 TEC2008-06756-C03-02/TEC NAN2004-09109-C04-01 CSD2006-00019 S 0505ESP 0200 PAI05-TEP-00383 PAI05-TEP-03516 |
Cita | Molina Rubio, S.I., Beltrán, A.M., Ben Fernández, T., Galindo Riaño, P.L., Guerrero Vázquez, E., Taboada, A.G.,...,Ripalda, J.M. (2009). High resolution electron microscopy of GaAs capped GaSb nanostructures. Applied Physics Letters, 94 (043114). https://doi.org/10.1063/1.3077009. |
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