dc.creator | López Martínez, Juan Manuel | es |
dc.creator | Vornicu, Ion | es |
dc.creator | Carmona Galán, Ricardo | es |
dc.creator | Rodríguez Vázquez, Ángel Benito | es |
dc.date.accessioned | 2019-12-02T14:56:06Z | |
dc.date.available | 2019-12-02T14:56:06Z | |
dc.date.issued | 2018 | |
dc.identifier.citation | López Martínez, J.M., Vornicu, I., Carmona Galán, R. y Rodríguez Vázquez, Á.B. (2018). An Experimentally-Validated Verilog-A SPAD Model Extracted from TCAD Simulation. En 25th IEEE International Conference on Electronics, Circuits and Systems (ICECS) (137-140), Burdeos, Francia: Institute of Electrical and Electronics Engineers. | |
dc.identifier.isbn | 978-1-5386-9562-3 | es |
dc.identifier.uri | https://hdl.handle.net/11441/90663 | |
dc.description.abstract | Single-photon avalanche diodes (SPAD) are photodetectors with exceptional characteristics. This paper proposes a new approach to model them in Verilog-A HDL with the help of a powerful tool: TCAD simulation. Besides, to the best of our knowledge, this is first model to incorporate a trap-assisted tunneling mechanism, a cross-section temperature dependence of the traps, and the self-heating effect. Comparison with experimental data establishes the validity of the model. | es |
dc.description.sponsorship | Junta de Andalucía TIC 2012-2338 | es |
dc.description.sponsorship | Ministerio de Economía y Competitividad TEC2015-66878-C3-1-R | es |
dc.description.sponsorship | Office of Naval Research (USA) N000141410355 | es |
dc.format | application/pdf | es |
dc.language.iso | eng | es |
dc.publisher | Institute of Electrical and Electronics Engineers | es |
dc.relation.ispartof | 25th IEEE International Conference on Electronics, Circuits and Systems (ICECS) (2018), p 137-140 | |
dc.rights | Attribution-NonCommercial-NoDerivatives 4.0 Internacional | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/4.0/ | * |
dc.subject | CMOS | es |
dc.subject | Verilog-A | es |
dc.subject | TCAD simulation | es |
dc.subject | Single-photon avalanche diode (SPAD) | es |
dc.subject | Device simulation | es |
dc.title | An Experimentally-Validated Verilog-A SPAD Model Extracted from TCAD Simulation | es |
dc.type | info:eu-repo/semantics/conferenceObject | es |
dcterms.identifier | https://ror.org/03yxnpp24 | |
dc.type.version | info:eu-repo/semantics/acceptedVersion | es |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | es |
dc.contributor.affiliation | Universidad de Sevilla. Departamento de Electrónica y Electromagnetismo | es |
dc.relation.projectID | TIC 2012-2338 | es |
dc.relation.projectID | TEC2015-66878-C3-1-R | es |
dc.relation.projectID | N000141410355 | es |
dc.relation.publisherversion | https://doi.org/10.1109/ICECS.2018.8617962 | es |
dc.identifier.doi | 10.1109/ICECS.2018.8617962 | es |
idus.format.extent | 4 p. | es |
dc.publication.initialPage | 137 | es |
dc.publication.endPage | 140 | es |
dc.eventtitle | 25th IEEE International Conference on Electronics, Circuits and Systems (ICECS) | es |
dc.eventinstitution | Burdeos, Francia | es |