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dc.creatorLópez Martínez, Juan Manueles
dc.creatorVornicu, Iones
dc.creatorCarmona Galán, Ricardoes
dc.creatorRodríguez Vázquez, Ángel Benitoes
dc.date.accessioned2019-12-02T14:56:06Z
dc.date.available2019-12-02T14:56:06Z
dc.date.issued2018
dc.identifier.citationLópez Martínez, J.M., Vornicu, I., Carmona Galán, R. y Rodríguez Vázquez, Á.B. (2018). An Experimentally-Validated Verilog-A SPAD Model Extracted from TCAD Simulation. En 25th IEEE International Conference on Electronics, Circuits and Systems (ICECS) (137-140), Burdeos, Francia: Institute of Electrical and Electronics Engineers.
dc.identifier.isbn978-1-5386-9562-3es
dc.identifier.urihttps://hdl.handle.net/11441/90663
dc.description.abstractSingle-photon avalanche diodes (SPAD) are photodetectors with exceptional characteristics. This paper proposes a new approach to model them in Verilog-A HDL with the help of a powerful tool: TCAD simulation. Besides, to the best of our knowledge, this is first model to incorporate a trap-assisted tunneling mechanism, a cross-section temperature dependence of the traps, and the self-heating effect. Comparison with experimental data establishes the validity of the model.es
dc.description.sponsorshipJunta de Andalucía TIC 2012-2338es
dc.description.sponsorshipMinisterio de Economía y Competitividad TEC2015-66878-C3-1-Res
dc.description.sponsorshipOffice of Naval Research (USA) N000141410355es
dc.formatapplication/pdfes
dc.language.isoenges
dc.publisherInstitute of Electrical and Electronics Engineerses
dc.relation.ispartof25th IEEE International Conference on Electronics, Circuits and Systems (ICECS) (2018), p 137-140
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internacional*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.subjectCMOSes
dc.subjectVerilog-Aes
dc.subjectTCAD simulationes
dc.subjectSingle-photon avalanche diode (SPAD)es
dc.subjectDevice simulationes
dc.titleAn Experimentally-Validated Verilog-A SPAD Model Extracted from TCAD Simulationes
dc.typeinfo:eu-repo/semantics/conferenceObjectes
dc.type.versioninfo:eu-repo/semantics/acceptedVersiones
dc.rights.accessrightsinfo:eu-repo/semantics/openAccesses
dc.contributor.affiliationUniversidad de Sevilla. Departamento de Electrónica y Electromagnetismoes
dc.relation.projectIDTIC 2012-2338es
dc.relation.projectIDTEC2015-66878-C3-1-Res
dc.relation.projectIDN000141410355es
dc.relation.publisherversionhttps://doi.org/10.1109/ICECS.2018.8617962es
dc.identifier.doi10.1109/ICECS.2018.8617962es
idus.format.extent4 p.es
dc.publication.initialPage137es
dc.publication.endPage140es
dc.eventtitle25th IEEE International Conference on Electronics, Circuits and Systems (ICECS)es
dc.eventinstitutionBurdeos, Franciaes

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Except where otherwise noted, this item's license is described as: Attribution-NonCommercial-NoDerivatives 4.0 Internacional