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Compositional characterization of SiC-SiO2 interfaces in MOSFETs


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Opened Access Compositional characterization of SiC-SiO2 interfaces in MOSFETs
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Author: Beltrán, A.M.
Schamm-Chardon, Sylvie
Mortet, Vincent
Bedel-Pereira, Eléna
Cristiano, Fuccio
Strenger, C.
Bauer, A.J.
Department: Universidad de Sevilla. Departamento de Ingeniería y Ciencia de los Materiales y del Transporte
Date: 2012
Document type: Presentation
Abstract: In the context of the MobiSiC project (Mobility engineering for SiC devices) we study 4H-SiC MOSFETs with the aim to get more insight in the C distribution and nature across the SiC-SiO2 interface and to correlate the results with electron mobility measurements. Investigations are based on the combination of structural and compositional analyses carried out by high resolution transmission electron microscopy (HRTEM) and spatially resolved EELS.
Cite: Beltrán, A.M., Schamm-Chardon, S., Mortet, V., Bedel-Pereira, E., Cristiano, F., Strenger, C. y Bauer, A.J. (2012). Compositional characterization of SiC-SiO2 interfaces in MOSFETs. En 15Th European Microscopy Conference Manchester (Gran Bretaña): The Royal Microscopical Society.
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