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Theoretical modelling of quaternary GaInAsSb/GaAs self-assembled quantum dots

 

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Opened Access Theoretical modelling of quaternary GaInAsSb/GaAs self-assembled quantum dots
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Author: Llorens Montolio, José Manuel
Taboada, Alfonso G.
Ripalda, José María
Alonso-Álvarez, Diego
Alén, Benito
Martín-Sánchez, Javier
García Martínez, Jorge Manuel
González Díez, Yolanda
Sánchez, A. M.
Beltrán, A.M.
Galindo, P. L.
Molina, Sergio I.
Department: Universidad de Sevilla. Departamento de Ingeniería y Ciencia de los Materiales y del Transporte
Date: 2010
Published in: Journal of Physics: Conference Series, 245 (1)
Document type: Article
Abstract: InAs/GaAs quantum dots exposed to Sb after growth exhibit spectral changes. We study in the present paper an idealized nanostructure consisting of a homogeneous distribution of the quaternary GaInAsSb surrounded by a barrier of GaAs. We find that the valence band offset is a critical parameter in modelling its electronic structure. Depending on this value, we predict a transition from type-I to type-II band alignment at a different Sb concentration. The addition of Sb to reduce the transition energy while keeping a type-I alignment is only of benefit at low Sb concentration.
Cite: Llorens Montolio, J.M., Taboada, A.G., Ripalda, J.M., Alonso-Álvarez, D., Alén, B., Martín-Sánchez, J.,...,Molina, S.I. (2010). Theoretical modelling of quaternary GaInAsSb/GaAs self-assembled quantum dots. Journal of Physics: Conference Series, 245 (1)
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URI: http://hdl.handle.net/11441/68335

DOI: 10.1088/1742-6596/245/1/012081

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