Now showing items 1-4 of 4

    • Icon

      Compositional analysis of InAs-GaAs-GaSb heterostructures by Low-Loss Electron Energy Loss Spectroscopy  [Article]

      Beltrán, A.M.; Ben, Teresa; Sánchez, A. M.; Gass, M.H.; Taboada, Alfonso G.; Ripalda, José María; Molina, Sergio I. (Institute of Physics Publishing, 2013)
      As an alternative to Core-Loss Electron Energy Loss Spectroscopy, Low-Loss EELS is suitable for compositional analysis of complex heterostructures, such as the InAs-GaAsGaSb system, since in this energy range the edges ...
    • Icon

      Incorporation of Sb in InAs/GaAs quantum dots  [Article]

      Molina, Sergio I.; Sánchez, A. M.; Beltrán, A.M.; Sales, David L.; Ben, Teresa; Chisholm, M. F.; Varela, María; Pennycook, Stephen J.; Galindo, P. L.; Papworth, A. J.; Goodhew, P. J.; Ripalda, José María (American Institute of Physics, 2007)
      The formation of a quaternary InGaAsSb alloy is shown to occur in the core of epitaxial GaSb capped InAs/GaAs quantum dots emitting at 1.3 m. The existence of the four constituent elements is demonstrated by using spatially ...
    • Icon

      Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots  [Article]

      Taboada, Alfonso G.; Sánchez, A. M.; Beltrán, A.M.; Bozkurt, M.; Alonso-Álvarez, Diego; Alén, Benito; Rivera, A.; Ripalda, José María; Llorens Montolio, José Manuel; Martín-Sánchez, Javier; González Díez, Yolanda; Ulloa, J. M.; García Martínez, Jorge Manuel; Molina, Sergio I.; Koenraad, P.M. (American Physical Society, 2010)
      We present experimental evidence of Sb incorporation inside InAs/GaAs 001 quantum dots exposed to an antimony flux immediately before capping with GaAs. The Sb composition profile inside the nanostructures as measured by ...
    • Icon

      Theoretical modelling of quaternary GaInAsSb/GaAs self-assembled quantum dots  [Article]

      Llorens Montolio, José Manuel; Taboada, Alfonso G.; Ripalda, José María; Alonso-Álvarez, Diego; Alén, Benito; Martín-Sánchez, Javier; García Martínez, Jorge Manuel; González Díez, Yolanda; Sánchez, A. M.; Beltrán, A.M.; Galindo, P. L.; Molina, Sergio I. (Institute of Physics Publishing, 2010)
      InAs/GaAs quantum dots exposed to Sb after growth exhibit spectral changes. We study in the present paper an idealized nanostructure consisting of a homogeneous distribution of the quaternary GaInAsSb surrounded by a barrier ...