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Compositional analysis of InAs-GaAs-GaSb heterostructures by Low-Loss Electron Energy Loss Spectroscopy
(Institute of Physics Publishing, 2013)
As an alternative to Core-Loss Electron Energy Loss Spectroscopy, Low-Loss EELS is suitable for compositional analysis of complex heterostructures, such as the InAs-GaAsGaSb system, since in this energy range the edges ...
Artículo
Theoretical modelling of quaternary GaInAsSb/GaAs self-assembled quantum dots
(Institute of Physics Publishing, 2010)
InAs/GaAs quantum dots exposed to Sb after growth exhibit spectral changes. We study in the present paper an idealized nanostructure consisting of a homogeneous distribution of the quaternary GaInAsSb surrounded by a barrier ...
Artículo
Incorporation of Sb in InAs/GaAs quantum dots
(American Institute of Physics, 2007)
The formation of a quaternary InGaAsSb alloy is shown to occur in the core of epitaxial GaSb capped InAs/GaAs quantum dots emitting at 1.3 m. The existence of the four constituent elements is demonstrated by using spatially ...
Artículo
Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots
(American Physical Society, 2010)
We present experimental evidence of Sb incorporation inside InAs/GaAs 001 quantum dots exposed to an antimony flux immediately before capping with GaAs. The Sb composition profile inside the nanostructures as measured by ...
Artículo
High resolution electron microscopy of GaAs capped GaSb nanostructures
(American Institute of Physics, 2009-01)
We show in this work that GaAs capping of 2 ML of GaSb grown by molecular beam epitaxy results in the formation of very small with heights of about 1 nm GaAsₓxSb₁₋ₓ nanostructures surrounded by a GaAs rich layer. This ...