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dc.creatorRosa Utrera, José Manuel de laes
dc.creatorPérez Verdú, Belénes
dc.creatorMedeiro Hidalgo, Fernandoes
dc.creatorRío Fernández, Rocío deles
dc.creatorRodríguez Vázquez, Ángel Benito
dc.date.accessioned2019-09-11T16:57:16Z
dc.date.available2019-09-11T16:57:16Z
dc.date.issued1999
dc.identifier.citationRosa Utrera, J.M.d.l., Pérez Verdú, B., Medeiro Hidalgo, F. y Río Fernández, R.d. (1999). Non-ideal quantization noise shaping in switched-current bandpass ΣΔ modulators. En Proceedings of the 1999 IEEE International Symposium on Circuits and Systems (476-479), Orlando, USA: Institute of Electrical and Electronics Engineers.
dc.identifier.isbn0-7803-5471-0es
dc.identifier.urihttps://hdl.handle.net/11441/89098
dc.description.abstractThis paper presents a systematic analysis of the major switched-current (SI) errors and their influence on the quantization noise shaping of SI BandPass SD Modulators (BPSDMs). Closed form equations are provided for the degradation of the signal-to-noise ratio and for the change of the notch frequency position in order to facilitate the design of this class of modulators. All these results have been validated by non-ideal time-domain behavioral simulations.es
dc.description.sponsorshipComisión Interministerial de Ciencia y Tecnología TIC 97-0580es
dc.formatapplication/pdfes
dc.language.isoenges
dc.publisherInstitute of Electrical and Electronics Engineerses
dc.relation.ispartofProceedings of the 1999 IEEE International Symposium on Circuits and Systems (1999), p 476-479
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internacional*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.subjectSwitched-current circuitses
dc.subjectBandpass ΣΔ modulatorses
dc.titleNon-ideal quantization noise shaping in switched-current bandpass ΣΔ modulatorses
dc.typeinfo:eu-repo/semantics/conferenceObjectes
dcterms.identifierhttps://ror.org/03yxnpp24
dc.type.versioninfo:eu-repo/semantics/acceptedVersiones
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses
dc.contributor.affiliationUniversidad de Sevilla. Departamento de Electrónica y Electromagnetismoes
dc.relation.projectIDTIC 97-0580es
dc.relation.publisherversionhttp://dx.doi.org/10.1109/ISCAS.1999.780777es
dc.identifier.doi10.1109/ISCAS.1999.780777es
idus.format.extent4 p.es
dc.publication.initialPage476es
dc.publication.endPage479es
dc.eventtitleProceedings of the 1999 IEEE International Symposium on Circuits and Systemses
dc.eventinstitutionOrlando, USAes
dc.identifier.sisius5402261es

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