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dc.creatorSuárez, Manueles
dc.creatorFernández Berni, Jorgees
dc.creatorCarmona Galán, Ricardoes
dc.creatorCabello, D.es
dc.creatorRodríguez Vázquez, Ángel Benitoes
dc.date.accessioned2018-05-15T14:10:26Z
dc.date.available2018-05-15T14:10:26Z
dc.date.issued2014
dc.identifier.citationSuárez, M., Fernández Berni, J., Carmona Galán, R., Cabello, D. y Rodríguez Vázquez, Á.B. (2014). A 26.5 nJ/px 2.64 Mpx/s CMOS Vision Sensor for Gaussian Pyramid Extraction.
dc.identifier.issn0018-9200es
dc.identifier.issn1558-173Xes
dc.identifier.urihttps://hdl.handle.net/11441/74635
dc.description.abstractThis paper introduces a CMOS vision sensor to extract the Gaussian pyramid with an energy cost of 26.5 nJ/px at 2.64 Mpx/s, thus outperforming conventional solutions employing an imager and a separate digital processor. The chip, manufactured in a 0.18 μm CMOS technology, consists of an arrangement of 88 × 60 processing elements (PEs) which captures images of 176 × 120 resolution and performs concurrent parallel processing right at pixel level. The Gaussian pyramid is generated by using a switched-capacitor network. Every PE includes four photodiodes, four MiM capacitors, one 8-bit single-slope ADC and one CDS circuit, occupying 44 x 44 μm2. Suitability of the chip is assessed by using metrics pertaining to visual trackinges
dc.description.sponsorshipOffice of Naval Research (USA) N000141410355es
dc.description.sponsorshipMinisterio de Economía y Competitividad TEC2009-12686, TEC2012- 38921-C02, IPT-2011-1625-430000, IPC-20111009es
dc.description.sponsorshipJunta de Andalucía TIC 2338-2013es
dc.description.sponsorshipXunta de Galicia EM2013/038es
dc.formatapplication/pdfes
dc.language.isoenges
dc.publisherInstitute of Electrical and Electronics Engineerses
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 Estados Unidos de América*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.titleA 26.5 nJ/px 2.64 Mpx/s CMOS Vision Sensor for Gaussian Pyramid Extractiones
dc.typeinfo:eu-repo/semantics/conferenceObjectes
dcterms.identifierhttps://ror.org/03yxnpp24
dc.type.versioninfo:eu-repo/semantics/acceptedVersiones
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses
dc.relation.projectIDN000141410355es
dc.relation.projectIDTEC2009-12686es
dc.relation.projectIDTEC2012- 38921-C02es
dc.relation.projectIDIPT-2011-1625-430000es
dc.relation.projectIDIPC-20111009es
dc.relation.projectIDTIC 2338-2013es
dc.relation.projectIDEM2013/038es
dc.relation.publisherversionhttp://dx.doi.org/10.1109/ESSCIRC.2014.6942084es
dc.identifier.doi10.1109/ESSCIRC.2014.6942084es
idus.format.extent4 p.es
dc.publication.initialPage311es
dc.publication.endPage314es
dc.eventtitleIEEE European Solid State Circuits Conferencees
dc.eventinstitutionVenice Lydo (Italia)es

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