dc.creator | Saraza Canflanca, Pablo | es |
dc.creator | Martín Martínez, J. | es |
dc.creator | Castro-López, Rubén | es |
dc.creator | Roca, E. | es |
dc.creator | Rodríguez, R. | es |
dc.creator | Fernández Fernández, Francisco Vidal | es |
dc.creator | Nafria, Montserrat | es |
dc.date.accessioned | 2024-09-10T14:23:57Z | |
dc.date.available | 2024-09-10T14:23:57Z | |
dc.date.issued | 2021-06-17 | |
dc.identifier.citation | Saraza Canflanca, P., Martín Martínez, J., Castro-López, R., Roca, E., Rodríguez, R., Fernández Fernández, F.V. y Nafria, M. (2021). Statistical characterization of time-dependent variability defects using the maximum current fluctuation. IEEE Transactions on Electron Devices, 68 (8), 4039-4044. https://doi.org/10.1109/TED.2021.3086448. | |
dc.identifier.issn | 1557-9646 | es |
dc.identifier.issn | 0018-9383 | es |
dc.identifier.uri | https://hdl.handle.net/11441/162387 | |
dc.description.abstract | This article presents a new methodology to extract, at a given operation condition, the statistical distribution of the number of active defects that contribute to the observed device time-dependent variability, as well as their amplitude distribution. Unlike traditional approaches based on complex and time-consuming individual analysis of thousands of current traces, the proposed approach uses a simpler trace processing, since only the maximum and minimum values of the drain current during a given time interval are needed. Moreover, this extraction method can also estimate defects causing small current shifts, which can be very complex to identify by traditional means. Experimental data in a wide range of gate voltages, from near-threshold up to nominal operation conditions, are analyzed with the proposed methodology. | es |
dc.description.sponsorship | Agencia Estatal de Investigación PID2019-103869RB, TEC2016-75151-C3-R | es |
dc.format | application/pdf | es |
dc.format.extent | 6 p. | es |
dc.language.iso | eng | es |
dc.publisher | Institute of Electrical and Electronics Engineers | es |
dc.relation.ispartof | IEEE Transactions on Electron Devices, 68 (8), 4039-4044. | |
dc.rights | Attribution-NonCommercial-NoDerivatives 4.0 Internacional | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/4.0/ | * |
dc.subject | Bias temperature instability (BTI) | es |
dc.subject | Maximum current fluctuation (MCF) | es |
dc.subject | Random telegraph noise (RTN) | es |
dc.subject | Time-dependent variability (TDV) | es |
dc.subject | Transistor | es |
dc.title | Statistical characterization of time-dependent variability defects using the maximum current fluctuation | es |
dc.type | info:eu-repo/semantics/article | es |
dc.type.version | info:eu-repo/semantics/acceptedVersion | es |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | es |
dc.contributor.affiliation | Universidad de Sevilla. Departamento de Electrónica y Electromagnetismo | es |
dc.relation.projectID | PID2019-103869RB | es |
dc.relation.projectID | TEC2016-75151-C3-R | es |
dc.relation.publisherversion | https://doi.org/10.1109/TED.2021.3086448 | es |
dc.identifier.doi | 10.1109/TED.2021.3086448 | es |
dc.journaltitle | IEEE Transactions on Electron Devices | es |
dc.publication.volumen | 68 | es |
dc.publication.issue | 8 | es |
dc.publication.initialPage | 4039 | es |
dc.publication.endPage | 4044 | es |
dc.contributor.funder | Agencia Estatal de Investigación. España | es |