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Artículo

dc.creatorSaraza Canflanca, Pabloes
dc.creatorMartín Martínez, J.es
dc.creatorCastro-López, Rubénes
dc.creatorRoca, E.es
dc.creatorRodríguez, R.es
dc.creatorFernández Fernández, Francisco Vidales
dc.creatorNafria, Montserrates
dc.date.accessioned2024-09-10T14:23:57Z
dc.date.available2024-09-10T14:23:57Z
dc.date.issued2021-06-17
dc.identifier.citationSaraza Canflanca, P., Martín Martínez, J., Castro-López, R., Roca, E., Rodríguez, R., Fernández Fernández, F.V. y Nafria, M. (2021). Statistical characterization of time-dependent variability defects using the maximum current fluctuation. IEEE Transactions on Electron Devices, 68 (8), 4039-4044. https://doi.org/10.1109/TED.2021.3086448.
dc.identifier.issn1557-9646es
dc.identifier.issn0018-9383es
dc.identifier.urihttps://hdl.handle.net/11441/162387
dc.description.abstractThis article presents a new methodology to extract, at a given operation condition, the statistical distribution of the number of active defects that contribute to the observed device time-dependent variability, as well as their amplitude distribution. Unlike traditional approaches based on complex and time-consuming individual analysis of thousands of current traces, the proposed approach uses a simpler trace processing, since only the maximum and minimum values of the drain current during a given time interval are needed. Moreover, this extraction method can also estimate defects causing small current shifts, which can be very complex to identify by traditional means. Experimental data in a wide range of gate voltages, from near-threshold up to nominal operation conditions, are analyzed with the proposed methodology.es
dc.description.sponsorshipAgencia Estatal de Investigación PID2019-103869RB, TEC2016-75151-C3-Res
dc.formatapplication/pdfes
dc.format.extent6 p.es
dc.language.isoenges
dc.publisherInstitute of Electrical and Electronics Engineerses
dc.relation.ispartofIEEE Transactions on Electron Devices, 68 (8), 4039-4044.
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internacional*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.subjectBias temperature instability (BTI)es
dc.subjectMaximum current fluctuation (MCF)es
dc.subjectRandom telegraph noise (RTN)es
dc.subjectTime-dependent variability (TDV)es
dc.subjectTransistores
dc.titleStatistical characterization of time-dependent variability defects using the maximum current fluctuationes
dc.typeinfo:eu-repo/semantics/articlees
dc.type.versioninfo:eu-repo/semantics/acceptedVersiones
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses
dc.contributor.affiliationUniversidad de Sevilla. Departamento de Electrónica y Electromagnetismoes
dc.relation.projectIDPID2019-103869RBes
dc.relation.projectIDTEC2016-75151-C3-Res
dc.relation.publisherversionhttps://doi.org/10.1109/TED.2021.3086448es
dc.identifier.doi10.1109/TED.2021.3086448es
dc.journaltitleIEEE Transactions on Electron Deviceses
dc.publication.volumen68es
dc.publication.issue8es
dc.publication.initialPage4039es
dc.publication.endPage4044es
dc.contributor.funderAgencia Estatal de Investigación. Españaes

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