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Artículo
Operation limits for RTD-based MOBILE circuits
dc.creator | Quintana Toledo, José María | es |
dc.creator | Avedillo de Juan, María José | es |
dc.creator | Núñez Martínez, Juan | es |
dc.creator | Pettenghi Roldán, Héctor | es |
dc.date.accessioned | 2024-01-10T12:03:02Z | |
dc.date.available | 2024-01-10T12:03:02Z | |
dc.date.issued | 2009-02 | |
dc.identifier.citation | Quintana Toledo, J.M., Avedillo de Juan, M.J., Núñez Martínez, J. y Pettenghi Roldán, H. (2009). Operation limits for RTD-based MOBILE circuits. IEEE Transactions on Circuits and Systems I: Regular Papers. https://doi.org/10.1109/TCSI.2008.925943. | |
dc.identifier.issn | 1549-8328 | es |
dc.identifier.issn | 1558-0806 | es |
dc.identifier.uri | https://hdl.handle.net/11441/153159 | |
dc.description.abstract | Resonant-tunneling-diode (RTD)-based monostable-bistable logic element (MOBILE) circuits operate properly in a certain frequency range. They exhibit both a minimum operating frequency and a maximum one. From a design point of view, it should be desirable to have gates with a correct operation from dc up to the maximum operating frequency (i.e., without the minimum bound). This paper undertakes this problem by analyzing how transistors and RTDs interact in RTD-based circuits. Two malfunctions have been identified: the incorrect evaluation of inputs and the lack of self-latching operation. The difficulty to study these problems in an analytical way has been overcome by resorting to series expansions for both the RTD and the heterojunction field-effect transistor I- V characteristics in the points of interest. We have obtained analytical expression linking representative device parameters and technological setup, for a MOBILE-based circuit to operate correctly. | es |
dc.format | application/pdf | es |
dc.language.iso | eng | es |
dc.publisher | IEEE | es |
dc.relation.ispartof | IEEE Transactions on Circuits and Systems I: Regular Papers. | |
dc.subject | Resonant Tunneling Diodes (RTDs) | es |
dc.subject | MOBILE circuits | es |
dc.subject | Linear Threshold Gates | es |
dc.subject | Nanoelectronics | es |
dc.title | Operation limits for RTD-based MOBILE circuits | es |
dc.type | info:eu-repo/semantics/article | es |
dc.type.version | info:eu-repo/semantics/acceptedVersion | es |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | es |
dc.contributor.affiliation | Universidad de Sevilla. Departamento de Electrónica y Electromagnetismo | es |
dc.relation.publisherversion | https://dx.doi.org/10.1109/TCSI.2008.925943 | es |
dc.identifier.doi | 10.1109/TCSI.2008.925943 | es |
dc.journaltitle | IEEE Transactions on Circuits and Systems I: Regular Papers | es |
Ficheros | Tamaño | Formato | Ver | Descripción |
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TCAS-I_preprint.pdf | 424.6Kb | [PDF] | Ver/ | Versión aceptada |
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