dc.creator | Lebedev, Vladim B. | es |
dc.creator | Cimalla, Volker | es |
dc.creator | Baumann, T. | es |
dc.creator | Ambacher, Oliver | es |
dc.creator | Morales, Francisco Miguel | es |
dc.creator | Lozano Suárez, Juan Gabriel | es |
dc.creator | González Robledo, David | es |
dc.date.accessioned | 2021-10-13T14:03:30Z | |
dc.date.available | 2021-10-13T14:03:30Z | |
dc.date.issued | 2006-11 | |
dc.identifier.citation | Lebedev, V.B., Cimalla, V., Baumann, T., Ambacher, O., Morales, F.M., Lozano Suárez, J.G. y González Robledo, D. (2006). Effect of dislocations on electrical and electron transport properties of InN thin films. II. Density and mobility of the carriers. Journal of Applied Physics, 100 (9), 094903-1-094903-8. | |
dc.identifier.issn | ISSN: 0021-8979 | es |
dc.identifier.issn | eISSN:1089-7550 | es |
dc.identifier.uri | https://hdl.handle.net/11441/126543 | |
dc.description.abstract | The influence of dislocations on electron transport properties of undoped InN thin films grown by
molecular-beam epitaxy on AlN 0001 pseudosubstrates is reported. The microstructure and the
electron transport in InN 0001 films of varying thickness were analyzed by transmission electron
microscopy and variable temperature Hall-effect measurements. It was found that crystal defects
have strong effects on the electron concentration and mobility of the carriers in the films. In
particular, the combined analysis of microscopy and Hall data showed a direct dependence between
free carrier and dislocation densities in InN. It was demonstrated that threading dislocations are
active suppliers of the electrons and an exponential decay of their density with the thickness implies
the corresponding decay in the carrier density. The analysis of the electron transport yields also a
temperature-independent carrier concentration, which indicates degenerate donor levels in the
narrow band-gap InN material. The relative insensitivity of the mobility with respect to the
temperature suggests that a temperature-independent dislocation strain field scattering dominates
over ionized impurity/defect and phonon scattering causing the increase of the mobility with rising
layer thickness due to the reducing dislocation density. Room temperature mobilities in excess of
1500 cm2 V−1 s−1 were obtained for 800 nm thick InN layers with the dislocation densities of
3 109 cm−2. | es |
dc.description.sponsorship | Deutsche Forschungsgemeinschaft AM105 ∕ 1-1, Alemania | es |
dc.description.sponsorship | Comisión Interministerial de Ciencia y Tecnología MAT2004-01234, España | es |
dc.description.sponsorship | Unión Europea NMP4-CT-2003- 505641 | es |
dc.description.sponsorship | Unión Europea NMP4-CT-2004-500101 | es |
dc.format | application/pdf | es |
dc.format.extent | 8 p. | es |
dc.language.iso | eng | es |
dc.publisher | American Institute of Physics | es |
dc.relation.ispartof | Journal of Applied Physics, 100 (9), 094903-1-094903-8. | |
dc.rights | Attribution-NonCommercial-NoDerivatives 4.0 Internacional | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/4.0/ | * |
dc.subject | Electric properties | es |
dc.subject | Semiconducting indium compounds | es |
dc.subject | Transport properties | es |
dc.subject | Dislocations (crystals) | es |
dc.title | Effect of dislocations on electrical and electron transport properties of InN thin films. II. Density and mobility of the carriers | es |
dc.type | info:eu-repo/semantics/article | es |
dcterms.identifier | https://ror.org/03yxnpp24 | |
dc.type.version | info:eu-repo/semantics/publishedVersion | es |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | es |
dc.contributor.affiliation | Universidad de Sevilla. Departamento de Ingeniería y Ciencia de los Materiales y del Transporte | es |
dc.relation.projectID | AM105 ∕ 1-1, Alemania | es |
dc.relation.projectID | MAT2004-01234, España | es |
dc.relation.projectID | NMP4-CT-2003- 505641 | es |
dc.relation.projectID | NMP4-CT-2004-500101 | es |
dc.relation.publisherversion | https://doi.org/10.1063/1.2363234 | es |
dc.identifier.doi | 10.1063/1.2363234 | es |
dc.journaltitle | Journal of Applied Physics | es |
dc.publication.volumen | 100 | es |
dc.publication.issue | 9 | es |
dc.publication.initialPage | 094903-1 | es |
dc.publication.endPage | 094903-8 | es |
dc.identifier.sisius | 6699989 | es |
dc.contributor.funder | Deutsche Forschungsgemeinschaft / German Research Foundation (DFG) | es |
dc.contributor.funder | Comisión Interministerial de Ciencia y Tecnología (CICYT). España | es |
dc.contributor.funder | European Union (UE) | es |