ListarInstituto de Microelectrónica de Sevilla (IMSE-CNM) por materia "Low supply voltage"
Mostrando ítems 1-5 de 5
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Ponencia
Assessing application areas for tunnel transistor technologies
(Institute of Electrical and Electronics Engineers (IEEE), 2016)Tunnel transistors are one of the most attractive steep subthreshold slope devices currently being investigated as a means ...
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Artículo
Comparative Analysis of Projected Tunnel and CMOS Transistors for Different Logic Application Areas
(Institute of Electrical and Electronics Engineers, 2016)In this paper, five projected tunnel FET (TFET) technologies are evaluated and compared with MOSFET and FinFET transistors ...
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Artículo
Comparison of TFETs and CMOS using optimal design points for power-speed trade-offs
(Institute of Electrical and Electronics Engineers, 2017)Tunnel transistors are one of the most attractive steep subthreshold slope devices currently being investigated as a means ...
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Ponencia
Complementary tunnel gate topology to reduce crosstalk effects
(Institute of Electrical and Electronics Engineers (IEEE), 2017)Tunnel transistors are one of the most attractive steep subthreshold slope devices which are being investigated to overcome ...
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Ponencia
Exploring logic architectures suitable for TFETs devices
(Institute of Electrical and Electronics Engineers, 2017)Tunnel transistors are steep subthreshold slope devices suitable for low voltage operation so being potential candidates ...