Ponencia
A General Subthreshold MOS Translinear Theorem
Autor/es | Serrano Gotarredona, María Teresa
Linares Barranco, Bernabé Andreou, Andreas G. |
Departamento | Universidad de Sevilla. Departamento de Arquitectura y Tecnología de Computadores |
Fecha de publicación | 1999 |
Fecha de depósito | 2020-09-30 |
Publicado en |
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ISBN/ISSN | 0-7803-5471-0 |
Resumen | This paper outlines the conditions under which the translinear principle can be fully exploited for MOS transistors operating in subthreshold. Due to the exponential nature of subthreshold MOS transistors the translinear ... This paper outlines the conditions under which the translinear principle can be fully exploited for MOS transistors operating in subthreshold. Due to the exponential nature of subthreshold MOS transistors the translinear principle applies immediately as long as the source-to-bulk voltages are made equal to zero (or constant). This paper addresses the conditions under which subthreshold MOS transistors still satisfy a translinear principle but without imposing this constraint. It is found that the translinear principle results in a more general formulation than the original for BJTs since now multiple translinear loops can be involved. The constraint of even number of transistors is no longer necessary. |
Cita | Serrano Gotarredona, M.T., Linares Barranco, B. y Andreou, A.G. (1999). A General Subthreshold MOS Translinear Theorem. En ISCAS 1999: IEEE International Symposium on Circuits and Systems (302-305), Orlando, Florida, USA: IEEE Computer Society. |
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