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Heavily boron doped nano-crystalline diamond growth by MW-LA-PECVD [Póster]

 

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Opened Access Heavily boron doped nano-crystalline diamond growth by MW-LA-PECVD [Póster]
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Author: Taylor, Andy
Ashcheulov, Petr
Hubík, Pavel
Klimša, Ladislav
Kopeček, Jaromír
Zivcova, Zuzana Vlckova
Remzová, M.
Kavan, L.
Beltrán, A.M.
Mortet, Vincent
Coordinator/Director: Yamasaki, Satoshi
Department: Universidad de Sevilla. Departamento de Ingeniería y Ciencia de los Materiales y del Transporte
Date: 2017
Published in: International Hasselt Diamond Workshop XXII - SBDD 2017 (2017),
Document type: Presentation
Abstract: Diamond is a unique semiconductor with a wide bandgap which is easily doped with boron and is acknowledged as one of the best materials for electrochemical applications. Heavily boron doped, high quality single crystal synthetic diamond can reach el...
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Cite: Taylor, A., Ashcheulov, P., Hubík, P., Klimša, L., Kopeček, J., Zivcova, Z.V.,...,Mortet, V. (2017). Heavily boron doped nano-crystalline diamond growth by MW-LA-PECVD [Póster]. En International Hasselt Diamond Workshop XXII - SBDD 2017, Hasselt, Belgium.
Size: 1.359Mb
Format: PDF

URI: https://hdl.handle.net/11441/87374

DOI: 10.13140/RG.2.2.12653.23527

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