dc.creator | Fernández Berni, Jorge | es |
dc.creator | Niemier, M. | es |
dc.creator | Hu, X.S. | es |
dc.creator | Lu, H. | es |
dc.creator | Li, W. | es |
dc.creator | Fay, P. | es |
dc.creator | Carmona Galán, Ricardo | es |
dc.creator | Rodríguez Vázquez, Ángel Benito | es |
dc.date.accessioned | 2018-04-23T16:31:33Z | |
dc.date.available | 2018-04-23T16:31:33Z | |
dc.date.issued | 2017 | |
dc.identifier.citation | Fernández Berni, J., Niemier, M., Hu, X.S., Lu, H., Li, W., Fay, P.,...,Rodríguez Vázquez, Á.B. (2017). TFET-based Well Capacity Adjustment in Active Pixel Sensor for Enhanced High Dynamic Range. Electronics Letters, 53 (9), 427-. | |
dc.identifier.issn | 0013-5194 (impreso) | es |
dc.identifier.issn | 1350-911X (electrónico) | es |
dc.identifier.uri | https://hdl.handle.net/11441/73370 | |
dc.description.abstract | We present a Tunnel Field-Effect Transistor (TFET)-based pixel circuit for well capacity adjustment that does not require subthreshold operation on the part of the reset transistor. In CMOS, this subthreshold operation leads to temporal noise, distortion and Fixed Pattern Noise (FPN), becoming a primary limiting performance factor. In the proposed circuit, we exploit the asymmetric conduction associated with TFETs. This property, arising from the inherent physical structure of the device, provides the selective well adjustments during photo-integration which are demanded for achieving High Dynamic Range (HDR). A GaNbased heterojunction TFET has been designed according to the specific requirements for this application | es |
dc.description.sponsorship | Ministerio de Economía y Competitividad TEC2015-66878-C3-1-R | es |
dc.description.sponsorship | Junta de Andalucía TIC 2338-2013 | es |
dc.description.sponsorship | Office of Naval Research (USA) N000141410355 | es |
dc.description.sponsorship | National Science Foundation (USA) 1344531 | es |
dc.format | application/pdf | es |
dc.language.iso | eng | es |
dc.publisher | Institute of Electrical and Electronics Engineers | es |
dc.relation.ispartof | Electronics Letters, 53 (9), 427-. | |
dc.rights | Attribution-NonCommercial-NoDerivatives 4.0 Internacional | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/4.0/ | * |
dc.title | TFET-based Well Capacity Adjustment in Active Pixel Sensor for Enhanced High Dynamic Range | es |
dc.type | info:eu-repo/semantics/article | es |
dcterms.identifier | https://ror.org/03yxnpp24 | |
dc.type.version | info:eu-repo/semantics/acceptedVersion | es |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | es |
dc.contributor.affiliation | Universidad de Sevilla. Departamento de Electrónica y Electromagnetismo | es |
dc.relation.projectID | TEC2015-66878-C3-1-R | es |
dc.relation.projectID | TIC 2338-2013 | es |
dc.relation.projectID | N000141410355 | es |
dc.relation.projectID | 1344531 | es |
dc.relation.publisherversion | http://dx.doi.org/10.1049/el.2016.4548 | es |
dc.identifier.doi | 10.1049/el.2016.4548 | es |
idus.format.extent | 2 p. | es |
dc.journaltitle | Electronics Letters | es |
dc.publication.volumen | 53 | es |
dc.publication.issue | 9 | es |
dc.publication.initialPage | 427 | es |