Repositorio de producción científica de la Universidad de Sevilla

0.13-µm CMOS tunable transconductor based on the body-driven gain boosting technique with application in Gm-C filters

Opened Access 0.13-µm CMOS tunable transconductor based on the body-driven gain boosting technique with application in Gm-C filters
Estadísticas
Icon
Exportar a
Autor: Sánchez Rodríguez, Trinidad
González Carvajal, Ramón
Pennisi, Salvatore
Gómez Galán, Juan Antonio
Departamento: Universidad de Sevilla. Departamento de Ingeniería Electrónica
Fecha: 2011
Publicado en: 20th European Conference on Circuit Theory and Design: Linkoping, (Suecia), 29-31 de agosto, 2011, 145-148
Tipo de documento: Ponencia
Resumen: We present a low-voltage low-power CMOS tunable transconductor exploiting body gain boosting to increase the small-signal output resistance. As a distinctive feature, the proposed scheme allows the OTA transconductance to be tuned via the current biasing the gain-boosting circuit. The proposed transconductor has been designed in a 0.13-µm CMOS technology and powered from a 1.2-V supply. To show a possible application, a 0.5-MHz tunable third order Chebyshev low pass filter suitable for the Ultra Low Power Bluetooth Standard has been designed. The filter simulations show that all the requirements of the chosen standard are met, with good performance in terms of linearity, noise and power consumption.
Tamaño: 520.7Kb
Formato: PDF

URI: http://hdl.handle.net/11441/23456

Mostrar el registro completo del ítem


Esta obra está bajo una Licencia Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 Internacional

Este registro aparece en las siguientes colecciones