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dc.creatorSerrano Gotarredona, María Teresaes
dc.creatorLinares Barranco, Bernabées
dc.date.accessioned2018-06-19T13:22:13Z
dc.date.available2018-06-19T13:22:13Z
dc.date.issued2002
dc.identifier.citationSerrano Gotarredona, M.T. y Linares Barranco, B. (2002). Current-mode fully-programmable piece-wise-linear block for neuro-fuzzy applications. Electronics Letters, 38 (20), 1165-1166.
dc.identifier.issn0013-5194es
dc.identifier.issn1350-911Xes
dc.identifier.urihttps://hdl.handle.net/11441/76320
dc.description.abstractA new method to implement an arbitrary piece-wise-linear characteristic in current mode is presented. Each of the breaking points and each slope is separately controllable. As an example a block that implements an N-shaped piece-wise-linearity has been designed. The N-shaped block operates in the subthreshold region and uses only ten transistors. These characteristics make it especially suitable for large arrays of neuro-fuzzy systems where the number of transistors and power consumption per cell is an important concern. A prototype of this block has been fabricated in a 0.35 μm CMOS technology. The functionality and programmability of this circuit has been verified through experimental results.es
dc.formatapplication/pdfes
dc.language.isoenges
dc.publisherInstitute of Electrical and Electronics Engineerses
dc.relation.ispartofElectronics Letters, 38 (20), 1165-1166.
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internacional*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.titleCurrent-mode fully-programmable piece-wise-linear block for neuro-fuzzy applicationses
dc.typeinfo:eu-repo/semantics/articlees
dcterms.identifierhttps://ror.org/03yxnpp24
dc.type.versioninfo:eu-repo/semantics/acceptedVersiones
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses
dc.contributor.affiliationUniversidad de Sevilla. Departamento de Arquitectura y Tecnología de Computadoreses
dc.relation.publisherversionhttp://dx.doi.org/10.1049/el:20020831es
dc.identifier.doi10.1049/el:20020831es
idus.format.extent2 p.es
dc.journaltitleElectronics Letterses
dc.publication.volumen38es
dc.publication.issue20es
dc.publication.initialPage1165es
dc.publication.endPage1166es

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