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dc.creatorLinares Barranco, Bernabées
dc.creatorSerrano Gotarredona, María Teresaes
dc.date.accessioned2018-06-15T14:00:54Z
dc.date.available2018-06-15T14:00:54Z
dc.date.issued2003
dc.identifier.citationLinares Barranco, B. y Serrano Gotarredona, M.T. (2003). On the design and characterization of femtoampere current-mode circuits. IEEE Journal of Solid-State Circuits, 38 (8), 1353-1363.
dc.identifier.issn0018-9200es
dc.identifier.urihttps://hdl.handle.net/11441/76267
dc.description.abstractIn this paper, we show and validate a reliable circuit design technique based on source voltage shifting for current-mode signal processing down to femtoamperes. The technique involves specific-current extractors and logarithmic current splitters for obtaining on-chip subpicoampere currents. It also uses a special on-chip sawtooth oscillator to monitor and measure currents down to a few femtoamperes. This way, subpicoampere currents are characterized without driving them off chip and requiring expensive instrumentation with complicated low leakage setups. A special current mirror is also introduced for reliably replicating such low currents. As an example, a simple log-domain first-order low-pass filter is Implemented that uses a 100-fF capacitor and a 3.5-fA bias current to achieve a cutoff frequency of 0.5 Hz. A technique for characterizing noise at these currents is also described and verified. Finally, transistor mismatch measurements are provided and discussed. Experimental measurements are shown throughout the paper, obtained from prototypes fabricated in the AMS 0.35-μm three-metal two-poly standard CMOS process.es
dc.description.sponsorshipMinisterio de Ciencia y Tecnología TIC-1999-0446-C02-02, FIT-070000-2001-0859, TIC-2000-0406-P4-05, TIC-2002-10878-Ees
dc.description.sponsorshipEuropean Union IST-2001-34124es
dc.formatapplication/pdfes
dc.language.isoenges
dc.publisherInstitute of Electrical and Electronics Engineerses
dc.relation.ispartofIEEE Journal of Solid-State Circuits, 38 (8), 1353-1363.
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internacional*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.subjectAnalog VLSI designes
dc.subjectLeakage currentses
dc.subjectMismatches
dc.subjectSubthresholdes
dc.subjectUltralow currentses
dc.subjectWeak inversiones
dc.titleOn the design and characterization of femtoampere current-mode circuitses
dc.typeinfo:eu-repo/semantics/articlees
dcterms.identifierhttps://ror.org/03yxnpp24
dc.type.versioninfo:eu-repo/semantics/acceptedVersiones
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses
dc.contributor.affiliationUniversidad de Sevilla. Departamento de Arquitectura y Tecnología de Computadoreses
dc.relation.projectIDTIC-1999-0446-C02-02es
dc.relation.projectIDFIT-070000-2001-0859es
dc.relation.projectIDTIC-2000-0406-P4-05es
dc.relation.projectIDTIC-2002-10878-Ees
dc.relation.projectIDIST-2001-34124es
dc.relation.publisherversionhttp://dx.doi.org/10.1109/JSSC.2003.814415es
dc.identifier.doi10.1109/JSSC.2003.814415es
idus.format.extent11 p.es
dc.journaltitleIEEE Journal of Solid-State Circuitses
dc.publication.volumen38es
dc.publication.issue8es
dc.publication.initialPage1353es
dc.publication.endPage1363es
dc.contributor.funderMinisterio de Ciencia y Tecnología (MCYT). España
dc.contributor.funderEuropean Union (UE)

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