A CMOS Imager for Time-of-Flight and Photon Counting Based on Single Photon Avalanche Diodes and In-Pixel Time-to-Digital Converters

Abstract

The design of a CMOS image sensor based on single-photon avalanche-diode (SPAD) array with in-pixel time-to-digital converter (TDC) is presented. The architecture of the imager is thoroughly described with emphasis on the characterization of the TDCs array. It is targeted for 3D image reconstruction. Several techniques as fast quenching/recharge circuit with tunable dead-time and time gated-operation are applied to reduce the noise and the power consumption. The chip was fabricated in a 0.18 m standard CMOS process and implements a double functionality: time-of-flight (ToF) estimation and photon counting. The imager features a programmable time resolution of the array of TDCs down to 145 ps. The measured accuracy of the minimum time bin is lower than 1LSB DNL and 1.7 LSB INL. The TDC jitter over the full dynamic range is less than 1 LSB.