Artículo
On an Efficient CAD implementation of the distance term in pelgrom's mismatch model
Autor/es | Linares Barranco, Bernabé
Serrano Gotarredona, María Teresa |
Fecha de publicación | 2007 |
Fecha de depósito | 2018-04-30 |
Publicado en |
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Resumen | In 1989, Pelgrom et al. published a mismatch model for
MOS transistors, where the variation of parameter mismatch between two
identical transistors is given by two independent terms: a size-dependent
term and a ... In 1989, Pelgrom et al. published a mismatch model for MOS transistors, where the variation of parameter mismatch between two identical transistors is given by two independent terms: a size-dependent term and a distance-dependent term. Some CAD tools based on a nonphysical interpretation of Pelgrom’s distance term result in excessive computationally expensive algorithms, which become nonviable even for circuits with a reduced number of transistors. Furthermore, some researchers are reporting new variations on the original nonphysically interpreted algorithms, which may render false results. The purpose of this paper is to clarify the physical interpretation of the distance term of Pelgrom et al. and indicate how to model it efficiently in prospective CAD tools. |
Cita | Linares Barranco, B. y Serrano Gotarredona, M.T. (2007). On an Efficient CAD implementation of the distance term in pelgrom's mismatch model. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 26 (8), 1534-1538. |
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