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dc.creatorCecchini, R.es
dc.creatorBenítez Jiménez, José Jesúses
dc.creatorSánchez López, Juan Carloses
dc.creatorFernández Camacho, Asunciónes
dc.date.accessioned2018-03-06T17:45:35Z
dc.date.available2018-03-06T17:45:35Z
dc.date.issued2012
dc.identifier.citationCecchini, R., Benítez Jiménez, J.J., Sánchez López, J.C. y Fernández Camacho, M.A. (2012). Nanoscale mechanically induced structural and electrical changes in Ge 2Sb 2Te 5 films. Journal of Applied Physics, 111, 016101-.
dc.identifier.issn0021-8979 (impreso)es
dc.identifier.issn1089-7550 (electrónico)es
dc.identifier.urihttps://hdl.handle.net/11441/70840
dc.description.abstractWe demonstrate that the microstructure and electrical properties of Ge 2Sb 2Te 5 films can be changed by a nanoscale mechanical process. Nanoscratching is used to define modified areas onto an as-deposited crystalline Ge 2Sb 2Te 5 film. Scanning tunneling microscopy measurements show that the modified areas have a very low electrical conductivity. Micro-Raman measurements indicate that the mechanically induced microstructural changes are consistent with a phase transformation from crystalline to amorphous, which can be reversed by laser irradiation.es
dc.description.sponsorshipConsejo Superior de Investigaciones Científicas 201060E102es
dc.description.sponsorshipMinisterio de Economía y Competitividad CSD2008-00023es
dc.description.sponsorshipJunta de Andalucía TEP217es
dc.formatapplication/pdfes
dc.language.isoenges
dc.publisherAmerican Institute of Physicses
dc.relation.ispartofJournal of Applied Physics, 111, 016101-.
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internacional*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.titleNanoscale mechanically induced structural and electrical changes in Ge 2Sb 2Te 5 filmses
dc.typeinfo:eu-repo/semantics/articlees
dcterms.identifierhttps://ror.org/03yxnpp24
dc.type.versioninfo:eu-repo/semantics/publishedVersiones
dc.rights.accessrightsinfo:eu-repo/semantics/openAccesses
dc.relation.projectID201060E102es
dc.relation.projectIDCSD2008-00023es
dc.relation.projectIDTEP217es
dc.relation.publisherversionhttp://dx.doi.org/10.1063/1.3673592es
dc.identifier.doi10.1063/1.3673592es
idus.format.extent3 p.es
dc.journaltitleJournal of Applied Physicses
dc.publication.volumen111es
dc.publication.initialPage016101es

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