Ponencia
Bifurcation Diagrams in MOS-NDR Frequency Divider Circuits
Autor/es | Núñez Martínez, Juan
Avedillo de Juan, María José Quintana Toledo, José María |
Departamento | Universidad de Sevilla. Departamento de Electrónica y Electromagnetismo |
Fecha de publicación | 2012-03 |
Fecha de depósito | 2017-03-28 |
ISBN/ISSN | 977-2177-128009 |
Resumen | The behavior of a circuit able to implement frequency division is studied. It is composed of a block with an IV characteristic exhibiting Negative Differential Resistance (NDR) built from MOS transistors plus an inductor ... The behavior of a circuit able to implement frequency division is studied. It is composed of a block with an IV characteristic exhibiting Negative Differential Resistance (NDR) built from MOS transistors plus an inductor and a resistor. Frequency division is obtained from the period adding sequences which appear in its bifurcation diagram. The analyzed circuit is an “all MOS” version of one previously reported which use Resonant Tunneling Diodes (RTDs) The results show that the dividing ratio can be selected by modulating the input signal frequency, in a similar way to the RTD-based circuit. |
Agencias financiadoras | Gobierno de España Junta de Andalucía |
Identificador del proyecto | TEC2007-67245/MIC
P07-TIC-02961 |
Cita | Núñez Martínez, J., Avedillo de Juan, M.J. y Quintana Toledo, J.M. (2012). Bifurcation Diagrams in MOS-NDR Frequency Divider Circuits. Playa del Carmen (México): Instituto Nacional de Astrofísica, Óptica y Electrónica; Universidad de Sevilla. |
Ficheros | Tamaño | Formato | Ver | Descripción |
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MOS-NDR.pdf | 587.2Kb | [PDF] | Ver/ | |