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Determination of the Time Constant Distribution of a Defect-Centric Time-Dependent Variability Model for Sub-100-nm FETs
dc.creator | Saraza Canflanca, Pablo | es |
dc.creator | Castro López, R. | es |
dc.creator | Roca, E. | es |
dc.creator | Martín Martínez, J. | es |
dc.creator | Rodríguez, R. | es |
dc.creator | Nafria, M. | es |
dc.creator | Fernández Fernández, Francisco Vidal | es |
dc.date.accessioned | 2024-09-05T13:29:59Z | |
dc.date.available | 2024-09-05T13:29:59Z | |
dc.date.issued | 2022 | |
dc.identifier.citation | Saraza Canflanca, P., Castro López, R., Roca, E., Martín Martínez, J., Rodríguez, R., Nafria, M. y Fernández Fernández, F.V. (2022). Determination of the Time Constant Distribution of a Defect-Centric Time-Dependent Variability Model for Sub-100-nm FETs. Transactions on Electron Devices, 69 (10), 5424-5429. https://doi.org/10.1109/TED.2022.3198383. | |
dc.identifier.issn | 1557-9646 | es |
dc.identifier.issn | 0018-9383 | es |
dc.identifier.uri | https://hdl.handle.net/11441/162294 | |
dc.description.abstract | The origin of some Time-Dependent Variability phenomena in FET technologies has been attributed to the charge carrier trapping/de-trapping activity of individual defects present in devices. Although some models have been presented to describe these phenomena from a so- called defect-centric perspective, limited attention has been paid to the complex process that goes from the experimental data of the phenomena up to the final construction of the model and all its components, specifically the one that pertains to the time constant distribution. This paper presents a detailed strategy aimed at determining the defect time constant distribution, specifically tailored for small area devices, using data obtained from conventional characterization procedures. | es |
dc.description.sponsorship | Ministerio de Ciencia e Innovación PID2019-103869RB-C31, PID2019-103869RB-C32 | es |
dc.description.sponsorship | Junta de Andalucía US-1380876 | es |
dc.format | application/pdf | es |
dc.format.extent | 7 p. | es |
dc.language.iso | eng | es |
dc.publisher | IEEE | es |
dc.relation.ispartof | Transactions on Electron Devices, 69 (10), 5424-5429. | |
dc.subject | Bias temperature instability (BTI) | es |
dc.subject | Characterization | es |
dc.subject | FET devices | es |
dc.subject | Modeling | es |
dc.subject | Time-dependent variability (TDV) | es |
dc.title | Determination of the Time Constant Distribution of a Defect-Centric Time-Dependent Variability Model for Sub-100-nm FETs | es |
dc.type | info:eu-repo/semantics/article | es |
dc.type.version | info:eu-repo/semantics/acceptedVersion | es |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | es |
dc.contributor.affiliation | Universidad de Sevilla. Departamento de Electrónica y Electromagnetismo | es |
dc.relation.projectID | PID2019-103869RB-C31 | es |
dc.relation.projectID | PID2019-103869RB-C32 | es |
dc.relation.projectID | US-1380876 | es |
dc.relation.publisherversion | https://doi.org/10.1109/TED.2022.3198383 | es |
dc.identifier.doi | 10.1109/TED.2022.3198383 | es |
dc.journaltitle | Transactions on Electron Devices | es |
dc.publication.volumen | 69 | es |
dc.publication.issue | 10 | es |
dc.publication.initialPage | 5424 | es |
dc.publication.endPage | 5429 | es |
dc.contributor.funder | Ministerio de Ciencia e Innovación (MICIN). España | es |
dc.contributor.funder | Junta de Andalucía | es |
Ficheros | Tamaño | Formato | Ver | Descripción |
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