dc.creator | Redjem, Walid | es |
dc.creator | Amsellem, Ariel J. | es |
dc.creator | Allen, Frances I. | es |
dc.creator | Benndorf, Gabriele | es |
dc.creator | Bin, Jianhui | es |
dc.creator | Bulanov, Stepan | es |
dc.creator | Esarey, Eric | es |
dc.creator | Feldman, Leonard C. | es |
dc.creator | Ferrer Fernández, Francisco Javier | es |
dc.creator | García López, Francisco Javier | es |
dc.creator | Schenkel, Thomas | es |
dc.date.accessioned | 2024-05-16T13:49:03Z | |
dc.date.available | 2024-05-16T13:49:03Z | |
dc.date.issued | 2023 | |
dc.identifier.citation | Redjem, W., Amsellem, A.J., Allen, F.I., Benndorf, G., Bin, J., Bulanov, S.,...,Schenkel, T. (2023). Defect Engineering of Silicon with Ion Pulses from Laser Acceleration. Communications Materials, 4 (1), 22. https://doi.org/10.1038/s43246-023-00349-4. | |
dc.identifier.issn | 2662-4443 | es |
dc.identifier.uri | https://hdl.handle.net/11441/158460 | |
dc.description.abstract | Defect engineering is foundational to classical electronic device development and for emerging quantum devices. Here, we report on defect engineering of silicon with ion pulses from a laser accelerator in the laser intensity range of 1019 W cm−2 and ion flux levels of up to 1022 ions cm−2 s−1, about five orders of magnitude higher than conventional ion implanters. Low energy ions from plasma expansion of the laser-foil target are implanted near the surface and then diffuse into silicon samples locally pre-heated by high energy ions from the same laser-ion pulse. Silicon crystals exfoliate in the areas of highest energy deposition. Color centers, predominantly W and G-centers, form directly in response to ion pulses without a subsequent annealing step. We find that the linewidth of G-centers increases with high ion flux faster than the linewidth of W-centers, consistent with density functional theory calculations of their electronic structure. Intense ion pulses from a laser-accelerator drive materials far from equilibrium and enable direct local defect engineering and high flux doping of semiconductors. | es |
dc.description.sponsorship | Office of Science DE-AC02-05CH11231 | es |
dc.format | application/pdf | es |
dc.format.extent | 10 p. | es |
dc.language.iso | eng | es |
dc.publisher | Springer Nature | es |
dc.relation.ispartof | Communications Materials, 4 (1), 22. | |
dc.rights | Atribución 4.0 Internacional | * |
dc.rights.uri | http://creativecommons.org/licenses/by/4.0/ | * |
dc.title | Defect Engineering of Silicon with Ion Pulses from Laser Acceleration | es |
dc.type | info:eu-repo/semantics/article | es |
dc.type.version | info:eu-repo/semantics/publishedVersion | es |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | es |
dc.contributor.affiliation | Universidad de Sevilla. Departamento de Física Atómica, Molecular y Nuclear | es |
dc.relation.projectID | DE-AC02-05CH11231 | es |
dc.relation.publisherversion | https://doi.org/10.1038/s43246-023-00349-4 | es |
dc.identifier.doi | 10.1038/s43246-023-00349-4 | es |
dc.journaltitle | Communications Materials | es |
dc.publication.volumen | 4 | es |
dc.publication.issue | 1 | es |
dc.publication.initialPage | 22 | es |
dc.contributor.funder | Office of Science. EE.UU. | es |