Artículo
Defect Engineering of Silicon with Ion Pulses from Laser Acceleration
Autor/es | Redjem, Walid
Amsellem, Ariel J. Allen, Frances I. Benndorf, Gabriele Bin, Jianhui Bulanov, Stepan Esarey, Eric Feldman, Leonard C. Ferrer Fernández, Francisco Javier ![]() ![]() ![]() ![]() ![]() ![]() García López, Francisco Javier ![]() ![]() ![]() ![]() ![]() ![]() Schenkel, Thomas |
Departamento | Universidad de Sevilla. Departamento de Física Atómica, Molecular y Nuclear |
Fecha de publicación | 2023 |
Fecha de depósito | 2024-05-16 |
Publicado en |
|
Resumen | Defect engineering is foundational to classical electronic device development and for emerging quantum devices. Here, we report on defect engineering of silicon with ion pulses from a laser accelerator in the laser intensity ... Defect engineering is foundational to classical electronic device development and for emerging quantum devices. Here, we report on defect engineering of silicon with ion pulses from a laser accelerator in the laser intensity range of 1019 W cm−2 and ion flux levels of up to 1022 ions cm−2 s−1, about five orders of magnitude higher than conventional ion implanters. Low energy ions from plasma expansion of the laser-foil target are implanted near the surface and then diffuse into silicon samples locally pre-heated by high energy ions from the same laser-ion pulse. Silicon crystals exfoliate in the areas of highest energy deposition. Color centers, predominantly W and G-centers, form directly in response to ion pulses without a subsequent annealing step. We find that the linewidth of G-centers increases with high ion flux faster than the linewidth of W-centers, consistent with density functional theory calculations of their electronic structure. Intense ion pulses from a laser-accelerator drive materials far from equilibrium and enable direct local defect engineering and high flux doping of semiconductors. |
Agencias financiadoras | Office of Science. EE.UU. |
Identificador del proyecto | DE-AC02-05CH11231
![]() |
Cita | Redjem, W., Amsellem, A.J., Allen, F.I., Benndorf, G., Bin, J., Bulanov, S.,...,Schenkel, T. (2023). Defect Engineering of Silicon with Ion Pulses from Laser Acceleration. Communications Materials, 4 (1), 22. https://doi.org/10.1038/s43246-023-00349-4. |
Ficheros | Tamaño | Formato | Ver | Descripción |
---|---|---|---|---|
Defect engineering of silicon ... | 1.839Mb | ![]() | Ver/ | |