dc.creator | Fiorelli, Rafaella | es |
dc.creator | Peralías Macías, Eduardo | es |
dc.creator | Méndez Romero, Roberto José | es |
dc.creator | Rajabali, Mona | es |
dc.creator | Kumar, Akash | es |
dc.creator | Zahedinejad, Mohammad | es |
dc.creator | Åkerman, Johan | es |
dc.creator | Moradi, Farshad | es |
dc.creator | Serrano Gotarredona, María Teresa | es |
dc.creator | Linares Barranco, Bernabé | |
dc.date.accessioned | 2024-02-29T11:10:59Z | |
dc.date.available | 2024-02-29T11:10:59Z | |
dc.date.issued | 2023-01 | |
dc.identifier.citation | Fiorelli, R., Peralías Macías, E., Méndez Romero, R.J., Rajabali, M., Kumar, A., Zahedinejad, M.,...,Serrano Gotarredona, T. (2023). CMOS Front End for Interfacing Spin-Hall Nano-Oscillators for Neuromorphic Computing in the GHz Range. Electronics, 12 (1), Article number 230. https://doi.org/10.3390/electronics12010230. | |
dc.identifier.issn | 2079-9292 | es |
dc.identifier.uri | https://hdl.handle.net/11441/155690 | |
dc.description.abstract | Spin-Hall-effect nano-oscillators are promising beyond the CMOS devices currently avail-
able, and can potentially be used to emulate the functioning of neurons in computational neuromor-
phic systems. As they oscillate in the 4–20 GHz range, they could potentially be used for building
highly accelerated neural hardware platforms. However, due to their extremely low signal level and
high impedance at their output, as well as their microwave-range operating frequency, discerning
whether the SHNO is oscillating or not carries a great challenge when its state read-out circuit is
implemented using CMOS technologies. This paper presents the first CMOS front-end read-out
circuitry, implemented in 180 nm, working at a SHNO oscillation frequency up to 4.7 GHz, managing
to discern SHNO amplitudes of 100 μV even for an impedance as large as 300 Ω and a noise figure
of 5.3 dB300 Ω. A design flow of this front end is presented, as well as the architecture of each of its
blocks. The study of the low-noise amplifier is deepened for its intrinsic difficulties in the design,
satisfying the characteristics of SHNOs. | es |
dc.description.sponsorship | Horizonte 2020 (Unión Europea) 899559 | es |
dc.format | application/pdf | es |
dc.format.extent | 18 p. | es |
dc.language.iso | eng | es |
dc.publisher | MDPI | es |
dc.relation.ispartof | Electronics, 12 (1), Article number 230. | |
dc.rights | Atribución 4.0 Internacional | * |
dc.rights.uri | http://creativecommons.org/licenses/by/4.0/ | * |
dc.subject | Neuromorphic | es |
dc.subject | SHNO | es |
dc.subject | Spin-hall oscillators | es |
dc.subject | Frond-end | es |
dc.subject | RF | es |
dc.subject | LNA | es |
dc.subject | Mixer | es |
dc.subject | CMOS | es |
dc.title | CMOS Front End for Interfacing Spin-Hall Nano-Oscillators for Neuromorphic Computing in the GHz Range | es |
dc.type | info:eu-repo/semantics/article | es |
dc.type.version | info:eu-repo/semantics/publishedVersion | es |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | es |
dc.contributor.affiliation | Universidad de Sevilla. Departamento de Arquitectura y Tecnología de Computadores | es |
dc.relation.projectID | 899559 | es |
dc.relation.publisherversion | https://www.mdpi.com/2079-9292/12/1/230 | es |
dc.identifier.doi | 10.3390/electronics12010230 | es |
dc.journaltitle | Electronics | es |
dc.publication.volumen | 12 | es |
dc.publication.issue | 1 | es |
dc.publication.initialPage | Article number 230 | es |
dc.contributor.funder | Horizonte 2020 (Unión Europea) | es |