Article
Optical and transport properties of Ti-doped In2O3 thin films prepared by electron beam physical vapour deposition
Author/s | Sánchez Marcos, J.
Ochando, I.M. Escobar-Galindo, Ramón Martínez Morilla, R. Prieto, C. |
Department | Universidad de Sevilla. Departamento de Física Aplicada I |
Publication Date | 2010-07 |
Deposit Date | 2023-06-23 |
Published in |
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Abstract | Ti-doped In2O3 (ITiO) thin films have been prepared by electron beam physical vapour deposition (EB-PVD). Their optical and electrical properties are studied for the obtained compositions. After oxygen annealing all samples ... Ti-doped In2O3 (ITiO) thin films have been prepared by electron beam physical vapour deposition (EB-PVD). Their optical and electrical properties are studied for the obtained compositions. After oxygen annealing all samples show excellent optical transparence; additionally, maximum values for conductivity are obtained for samples with titanium contents near 6 at.%, with typical resistivity values of 4 x 105 V cm. Finally, the band-gap energy evolution is studied for the set of samples. |
Funding agencies | Ministerio de Educación y Cultura (MEC). España |
Project ID. | MAT2006-01004 |
Citation | Sánchez Marcos, J., Ochando, I.M., Escobar-Galindo, R., Martínez Morilla, R. y Prieto, C. (2010). Optical and transport properties of Ti-doped In2O3 thin films prepared by electron beam physical vapour deposition. physica status solidi (a), 207 (7), 1549-1553. https://doi.org/10.1002/pssa.200983717. |
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