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COTS Tolerant to Total Ionizing Dose (TID): AlGaN/GaNbased transistor 10 KeV X-ray Analysis

dc.creatorBôas, Alexis C.Vilases
dc.creatorAlberton, Saulo G.P.N.es
dc.creatorde Melo, Marco Antônio Assises
dc.creatorSantos, Roberto Baginski Batistaes
dc.creatorGiacomini, R. Camargoes
dc.creatorMedina, Nilberto H.es
dc.creatorSeixas, Luís Eduardoes
dc.creatorFinco, S.es
dc.creatorPalomo Pinto, Rogelioes
dc.creatorGuazzelli, Marcilei Aparecidaes
dc.date.accessioned2023-06-16T17:54:34Z
dc.date.available2023-06-16T17:54:34Z
dc.date.issued2022
dc.identifier.citationBôas, A.C.V., Alberton, S.G.P.N., de Melo, M.A.A., Santos, R.B.B., Giacomini, R.C., Medina, N.H.,...,Guazzelli, M.A. (2022). COTS Tolerant to Total Ionizing Dose (TID): AlGaN/GaNbased transistor 10 KeV X-ray Analysis. En 44th Brazilian Workshop on Nuclear Physics Virtual, Online.
dc.identifier.issn1742-6588es
dc.identifier.urihttps://hdl.handle.net/11441/147297
dc.descriptionContent from this work may be used under the terms of theCreative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. Published under licence by IOP Publishing Ltd.es
dc.description.abstractGallium nitride commercial transistors (GaN FET) are great candidates as power devices tolerant to the effects of Total ionizing dose (TID). Therefore, we have evaluated its robustness by analysing parameters in its characteristic parameters. Devices were exposed to a 10 keV X-ray source accumulating a total of 350 krad(Si). However, results indicate that the tested components are more tolerant to the effects of TID when in on-state mode rather than the off-mode, that is, when the device is working, which is good news for COTS applications in environments subject to the effects of ionizing radiation.es
dc.formatapplication/pdfes
dc.format.extent7 p.es
dc.language.isoenges
dc.publisherIOP Sciencees
dc.relation.ispartof44th Brazilian Workshop on Nuclear Physics (2022).
dc.rightsAtribución 4.0 Internacional*
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/*
dc.titleCOTS Tolerant to Total Ionizing Dose (TID): AlGaN/GaNbased transistor 10 KeV X-ray Analysises
dc.typeinfo:eu-repo/semantics/conferenceObjectes
dcterms.identifierhttps://ror.org/03yxnpp24
dc.type.versioninfo:eu-repo/semantics/publishedVersiones
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses
dc.contributor.affiliationUniversidad de Sevilla. Departamento de Ingeniería Electrónicaes
dc.relation.publisherversionhttps://iopscience.iop.org/article/10.1088/1742-6596/2340/1/012045es
dc.identifier.doi10.1088/1742-6596/2340/1/012045es
dc.contributor.groupUniversidad de Sevilla. TIC192: Ingeniería Electrónicaes
dc.eventtitle44th Brazilian Workshop on Nuclear Physicses
dc.eventinstitutionVirtual, Onlinees

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