Ponencia
COTS Tolerant to Total Ionizing Dose (TID): AlGaN/GaNbased transistor 10 KeV X-ray Analysis
Autor/es | Bôas, Alexis C.Vilas
Alberton, Saulo G.P.N. de Melo, Marco Antônio Assis Santos, Roberto Baginski Batista Giacomini, R. Camargo Medina, Nilberto H. Seixas, Luís Eduardo Finco, S. Palomo Pinto, Rogelio Guazzelli, Marcilei Aparecida |
Departamento | Universidad de Sevilla. Departamento de Ingeniería Electrónica |
Fecha de publicación | 2022 |
Fecha de depósito | 2023-06-16 |
Publicado en |
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ISBN/ISSN | 1742-6588 |
Resumen | Gallium nitride commercial transistors (GaN FET) are great candidates as power devices tolerant to the effects of Total ionizing dose (TID). Therefore, we have evaluated its robustness by analysing parameters in its ... Gallium nitride commercial transistors (GaN FET) are great candidates as power devices tolerant to the effects of Total ionizing dose (TID). Therefore, we have evaluated its robustness by analysing parameters in its characteristic parameters. Devices were exposed to a 10 keV X-ray source accumulating a total of 350 krad(Si). However, results indicate that the tested components are more tolerant to the effects of TID when in on-state mode rather than the off-mode, that is, when the device is working, which is good news for COTS applications in environments subject to the effects of ionizing radiation. |
Cita | Bôas, A.C.V., Alberton, S.G.P.N., de Melo, M.A.A., Santos, R.B.B., Giacomini, R.C., Medina, N.H.,...,Guazzelli, M.A. (2022). COTS Tolerant to Total Ionizing Dose (TID): AlGaN/GaNbased transistor 10 KeV X-ray Analysis. En 44th Brazilian Workshop on Nuclear Physics Virtual, Online. |
Ficheros | Tamaño | Formato | Ver | Descripción |
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JOP_2022_Boas_COTS_OA.pdf | 1.000Mb | [PDF] | Ver/ | |