Ag-N dual acceptor doped p-type ZnO thin films by DC reactive magnetron co-sputtering

Ortega, J. J.; Ortiz Hernández, A. A.; Berumen Torres, J.; Escobar-Galindo, Ramón; Méndez García, V. H.; Araiza, J.J.

doi:10.1016/j.matlet.2016.06.005

Artículo

dc.creator	Ortega, J. J.	es
dc.creator	Ortiz Hernández, A. A.	es
dc.creator	Berumen Torres, J.	es
dc.creator	Escobar-Galindo, Ramón	es
dc.creator	Méndez García, V. H.	es
dc.creator	Araiza, J.J.	es
dc.date.accessioned	2023-06-13T10:36:21Z
dc.date.available	2023-06-13T10:36:21Z
dc.date.issued	2016-10-15
dc.identifier.citation	Ortega, J.J., Ortiz Hernández, A.A., Berumen Torres, J., Escobar-Galindo, R., Méndez García, V.H. y Araiza, J.J. (2016). Ag-N dual acceptor doped p-type ZnO thin films by DC reactive magnetron co-sputtering. Materials Letters, 181, 12-15. https://doi.org/10.1016/j.matlet.2016.06.005.
dc.identifier.issn	0167-577X (impreso)	es
dc.identifier.issn	1873-4979 (online)	es
dc.identifier.uri	https://hdl.handle.net/11441/147158
dc.description.abstract	ZnO p-type thin films were deposited by dual acceptor co-doping using nitrogen and silver via DC reactive magnetron co-sputtering. As precursor material were used a Zn and an Ag metallic targets with a purity of 99.99%. X-ray energy dispersive spectroscopy (EDX) confirmed the presence of Ag and N in ZnO: Ag,N films. The electrical properties were explored by Hall Effect measurement and showed a low hole concentration for the as-deposited ZnO: Ag,N film. However, after annealing treatment, the films remained p-type and the electrical properties were improved significantly. The best electrical properties showed a low resistivity of 8.56 x 103 Ωcm, Hall mobility of 23 cm2 /Vs and a very high hole concentration of 3.17 x 1019 cm-3.	es
dc.format	application/pdf	es
dc.format.extent	4	es
dc.language.iso	eng	es
dc.publisher	ScienceDirect	es
dc.relation.ispartof	Materials Letters, 181, 12-15.
dc.rights	Attribution-NonCommercial-NoDerivatives 4.0 Internacional	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/4.0/	*
dc.subject	P-type zno	es
dc.subject	Ag-n doping zno	es
dc.subject	High hole concentration	es
dc.subject	Co-sputtering	es
dc.title	Ag-N dual acceptor doped p-type ZnO thin films by DC reactive magnetron co-sputtering	es
dc.type	info:eu-repo/semantics/article	es
dcterms.identifier	https://ror.org/03yxnpp24
dc.type.version	info:eu-repo/semantics/publishedVersion	es
dc.rights.accessRights	info:eu-repo/semantics/openAccess	es
dc.contributor.affiliation	Universidad de Sevilla. Departamento de Física Aplicada I	es
dc.relation.publisherversion	https://www.sciencedirect.com/science/article/pii/S0167577X16309600?via%3Dihub	es
dc.identifier.doi	10.1016/j.matlet.2016.06.005	es
dc.journaltitle	Materials Letters	es
dc.publication.volumen	181	es
dc.publication.initialPage	12	es
dc.publication.endPage	15	es

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