Artículo
Ag-N dual acceptor doped p-type ZnO thin films by DC reactive magnetron co-sputtering
Autor/es | Ortega, J. J.
Ortiz Hernández, A. A. Berumen Torres, J. Escobar-Galindo, Ramón ![]() ![]() ![]() ![]() ![]() ![]() ![]() Méndez García, V. H. Araiza, J.J. |
Departamento | Universidad de Sevilla. Departamento de Física Aplicada I |
Fecha de publicación | 2016-10-15 |
Fecha de depósito | 2023-06-13 |
Publicado en |
|
Resumen | ZnO p-type thin films were deposited by dual acceptor co-doping using nitrogen and silver via DC reactive magnetron co-sputtering. As precursor material were used a Zn and an Ag metallic targets with a purity of 99.99%. ... ZnO p-type thin films were deposited by dual acceptor co-doping using nitrogen and silver via DC reactive magnetron co-sputtering. As precursor material were used a Zn and an Ag metallic targets with a purity of 99.99%. X-ray energy dispersive spectroscopy (EDX) confirmed the presence of Ag and N in ZnO: Ag,N films. The electrical properties were explored by Hall Effect measurement and showed a low hole concentration for the as-deposited ZnO: Ag,N film. However, after annealing treatment, the films remained p-type and the electrical properties were improved significantly. The best electrical properties showed a low resistivity of 8.56 x 103 Ωcm, Hall mobility of 23 cm2 /Vs and a very high hole concentration of 3.17 x 1019 cm-3. |
Cita | Ortega, J.J., Ortiz Hernández, A.A., Berumen Torres, J., Escobar-Galindo, R., Méndez García, V.H. y Araiza, J.J. (2016). Ag-N dual acceptor doped p-type ZnO thin films by DC reactive magnetron co-sputtering. Materials Letters, 181, 12-15. https://doi.org/10.1016/j.matlet.2016.06.005. |
Ficheros | Tamaño | Formato | Ver | Descripción |
---|---|---|---|---|
1-s2.0-S0167577X16309600-main.pdf | 424.3Kb | ![]() | Ver/ | |