dc.creator | Otero Ugobono, Sofía | es |
dc.creator | Rafí Tatjer, Joan Marc | es |
dc.creator | Godignon, Philippe | es |
dc.creator | Pellegrini, Giulio | es |
dc.creator | Rius Suñé, Gemma | es |
dc.creator | Jiménez Ramos, María del Carmen | es |
dc.creator | García López, Francisco Javier | es |
dc.creator | García Osuna, Adrián | |
dc.date.accessioned | 2023-04-18T07:41:42Z | |
dc.date.available | 2023-04-18T07:41:42Z | |
dc.date.issued | 2022 | |
dc.identifier.citation | Otero Ugobono, S., Rafí Tatjer, J.M., Godignon, P., Pellegrini, G., Rius Suñé, G., Jiménez Ramos, M.d.C.,...,García Osuna, A. (2022). Monolithic integration of graphene in SiC radiation sensors for harsh-environment applications. Materials Science Forum, 1062, 458-462. https://doi.org/10.4028/p-hd601i. | |
dc.identifier.issn | 0255-5476 | es |
dc.identifier.issn | 1662-9752 | es |
dc.identifier.uri | https://hdl.handle.net/11441/144565 | |
dc.description.abstract | Due to their low leakage current, low noise levels, high thermal conductivity, and potential radiation hardness, SiC devices offer various advantages over Si devices in certain applications. As a result, they are being considered for operation in harsh environments, such as plasma diagnostic systems in future nuclear fusion reactors or in high energy physics applications. We report on relevant results of the GRACE project, which seeks to deliver a new generation of SiC sensors with graphene-enhanced contacts. Such devices are aimed to be radiation-hard and functional at high temperatures. The work presented in this paper focuses on the optimisation of the electrical contacts, along with the electrical characterisation and radiation-tolerance assessment of the first sensor prototypes produced. | es |
dc.format | application/pdf | es |
dc.format.extent | 5 p. | es |
dc.language.iso | eng | es |
dc.publisher | Trans Tech Publications | es |
dc.relation.ispartof | Materials Science Forum, 1062, 458-462. | |
dc.rights | Attribution-NonCommercial-NoDerivatives 4.0 Internacional | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/4.0/ | * |
dc.subject | Epitaxial graphene | es |
dc.subject | Detectors | es |
dc.subject | Radiation hardness | es |
dc.subject | Resistivity | es |
dc.subject | CTLM | es |
dc.title | Monolithic integration of graphene in SiC radiation sensors for harsh-environment applications | es |
dc.type | info:eu-repo/semantics/article | es |
dcterms.identifier | https://ror.org/03yxnpp24 | |
dc.type.version | info:eu-repo/semantics/publishedVersion | es |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | es |
dc.contributor.affiliation | Universidad de Sevilla. Departamento de Física Aplicada II | es |
dc.contributor.affiliation | Universidad de Sevilla. Departamento de Física Atómica, Molecular y Nuclear | es |
dc.relation.projectID | RTC-2017-6369-3 | es |
dc.relation.publisherversion | https://www.scientific.net/MSF.1062.458.pdf | es |
dc.identifier.doi | 10.4028/p-hd601i | es |
dc.contributor.group | Universidad de Sevilla. RNM138: Física Nuclear Aplicada | es |
dc.journaltitle | Materials Science Forum | es |
dc.publication.volumen | 1062 | es |
dc.publication.initialPage | 458 | es |
dc.publication.endPage | 462 | es |
dc.contributor.funder | Agencia Estatal de Investigación. España | es |
dc.contributor.funder | European Commission (EC). Fondo Europeo de Desarrollo Regional (FEDER) | es |