Artículo
Monolithic integration of graphene in SiC radiation sensors for harsh-environment applications
Autor/es | Otero Ugobono, Sofía
Rafí Tatjer, Joan Marc Godignon, Philippe Pellegrini, Giulio Rius Suñé, Gemma Jiménez Ramos, María del Carmen García López, Francisco Javier ![]() ![]() ![]() ![]() ![]() ![]() García Osuna, Adrián |
Departamento | Universidad de Sevilla. Departamento de Física Aplicada II Universidad de Sevilla. Departamento de Física Atómica, Molecular y Nuclear |
Fecha de publicación | 2022 |
Fecha de depósito | 2023-04-18 |
Publicado en |
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Resumen | Due to their low leakage current, low noise levels, high thermal conductivity, and potential radiation hardness, SiC devices offer various advantages over Si devices in certain applications. As a result, they are being ... Due to their low leakage current, low noise levels, high thermal conductivity, and potential radiation hardness, SiC devices offer various advantages over Si devices in certain applications. As a result, they are being considered for operation in harsh environments, such as plasma diagnostic systems in future nuclear fusion reactors or in high energy physics applications. We report on relevant results of the GRACE project, which seeks to deliver a new generation of SiC sensors with graphene-enhanced contacts. Such devices are aimed to be radiation-hard and functional at high temperatures. The work presented in this paper focuses on the optimisation of the electrical contacts, along with the electrical characterisation and radiation-tolerance assessment of the first sensor prototypes produced. |
Agencias financiadoras | Agencia Estatal de Investigación. España European Commission (EC). Fondo Europeo de Desarrollo Regional (FEDER) |
Identificador del proyecto | RTC-2017-6369-3
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Cita | Otero Ugobono, S., Rafí Tatjer, J.M., Godignon, P., Pellegrini, G., Rius Suñé, G., Jiménez Ramos, M.d.C.,...,García Osuna, A. (2022). Monolithic integration of graphene in SiC radiation sensors for harsh-environment applications. Materials Science Forum, 1062, 458-462. https://doi.org/10.4028/p-hd601i. |
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