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dc.creatorShamsi, Jafares
dc.creatorAvedillo de Juan, María Josées
dc.creatorLinares Barranco, Bernabées
dc.creatorSerrano Gotarredona, María Teresaes
dc.date.accessioned2023-04-17T11:18:31Z
dc.date.available2023-04-17T11:18:31Z
dc.date.issued2023-02
dc.identifier.citationShamsi, J., Avedillo de Juan, M.J., Linares Barranco, B. y Serrano Gotarredona, M.T. (2023). Effect of Device Mismatches in Differential Oscillatory Neural Networks. IEEE Transactions on Circuits and Systems I: Regular Papers, 70 (2), 872-883. https://doi.org/10.1109/TCSI.2022.3221540.
dc.identifier.issn1549-8328 (impreso)es
dc.identifier.issn1558-0806 (online)es
dc.identifier.urihttps://hdl.handle.net/11441/144493
dc.description.abstractAnalog implementation of Oscillatory Neural Networks (ONNs) has the potential to implement fast and ultra-low-power computing capabilities. One of the drawbacks of analog implementation is component mismatches which cause desynchronization and instability in ONNs. Emerging devices like memristors and VO2 are particularly prone to variations. In this paper, we study the effect of component mismatches on the performance of differential ONNs (DONNs). Mismatches were considered in two main blocks: differential oscillatory neurons and synaptic circuits. To measure DONN tolerance to mismatches in each block, performance was evaluated with mismatches being present separately in each block. Memristor-bridge circuits with four memristors were used as the synaptic circuits. The differential oscillatory neurons were based on VO2 -devices. The simulation results showed that DONN performance was more vulnerable to mismatches in the components of the differential oscillatory neurons than to mismatches in the synaptic circuits. DONNs were found to tolerate up to 20% mismatches in the memristance of the synaptic circuits. However, mismatches in the differential oscillatory neurons resulted in non-uniformity of the natural frequencies, causing desynchronization and instability. Simulations showed that 0.5% relative standard deviation (RSD) in natural frequencies can reduce DONN performance dramatically. In addition, sensitivity analyses showed that the high threshold voltage of VO2-devices is the most sensitive parameter for frequency non-uniformity and desynchronization.es
dc.description.sponsorshipMinisterio de Economía y Competitividad PID2019-105556GB-C31es
dc.formatapplication/pdfes
dc.format.extent12es
dc.language.isoenges
dc.publisherIEEEes
dc.relation.ispartofIEEE Transactions on Circuits and Systems I: Regular Papers, 70 (2), 872-883.
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internacional*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.subjectComponnts mismatches
dc.subjecthopfield neural networkes
dc.subjectmemristores
dc.subjectoscillatory neural networks,es
dc.subjectsensitivity analysises
dc.subjectVO2 devicees
dc.titleEffect of Device Mismatches in Differential Oscillatory Neural Networkses
dc.typeinfo:eu-repo/semantics/articlees
dcterms.identifierhttps://ror.org/03yxnpp24
dc.type.versioninfo:eu-repo/semantics/publishedVersiones
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses
dc.contributor.affiliationUniversidad de Sevilla. Departamento de Arquitectura y Tecnología de Computadoreses
dc.contributor.affiliationUniversidad de Sevilla. Departamento de Electrónica y Electromagnetismoes
dc.relation.projectIDPID2019-105556GB-C31es
dc.relation.publisherversionhttps://ieeexplore.ieee.org/document/9956793es
dc.identifier.doi10.1109/TCSI.2022.3221540es
dc.journaltitleIEEE Transactions on Circuits and Systems I: Regular Paperses
dc.publication.volumen70es
dc.publication.issue2es
dc.publication.initialPage872es
dc.publication.endPage883es
dc.contributor.funderMinisterio de Economía y Competitividad (MINECO). Españaes

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