Article
High temperature creep of 20 vol%. SiC-HfB2 UHTCs up to 2000 °C and the effect of La2O3 addition
| Author/s | Zapata Solvas, E.
Gómez García, Diego 
Domínguez Rodríguez, Arturo Lee, W. E. |
| Department | Universidad de Sevilla. Departamento de Física de la Materia Condensada |
| Publication Date | 2018 |
| Deposit Date | 2022-08-10 |
| Published in |
|
| Abstract | High temperature compressive creep of SiC-HfB2 UHTCs up to 2000 °C has been studied. Microstructural analysis after deformation reveals formation of new phases in the Hf-B-Si and Hf-B-Si-C systems, which are responsible ... |
| Funding agencies | Ministerio de Economia, Industria y Competitividad (MINECO). España Engineering and Physical Sciences Research Council (EPSRC). United Kingdom |
| Project ID. | AT2015-71411-R
EP/K008749/1 |
| Citation | Zapata Solvas, E., Gómez García, D., Domínguez Rodríguez, A. y Lee, W.E. (2018). High temperature creep of 20 vol%. SiC-HfB2 UHTCs up to 2000 °C and the effect of La2O3 addition. Journal of the European Ceramic Society, 38 (1), 47-56. |
: 
| Files | Size | Format | View | Description |
|---|---|---|---|---|
| 1-s2.0-S0955221917305678-main.pdf | 2.568Mb | 
[PDF]
| View/ | |
https://hdl.handle.net/11441/136095
https://doi.org/10.1016/j.jeurceramsoc.2017.08.028This item appears in the following collection(s)
Except where otherwise noted, this item's license is described as: Attribution-NonCommercial-NoDerivatives 4.0 Internacional