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dc.creatorSánchez Rodríguez, Trinidades
dc.creatorGómez Galán, Juan Antonioes
dc.creatorMárquez Lasso, Fernando J.es
dc.creatorSánchez Raya, Manueles
dc.creatorHinojo Montero, José Maríaes
dc.creatorMuñoz Chavero, Fernandoes
dc.date.accessioned2022-02-15T15:25:42Z
dc.date.available2022-02-15T15:25:42Z
dc.date.issued2021-11
dc.identifier.citationSánchez Rodríguez, T., Gómez Galán, J.A., Márquez Lasso, F.J., Sánchez Raya, M., Hinojo Montero, J.M. y Muñoz Chavero, F. (2021). Analog CMOS Readout Channel for Time and Amplitude Measurements With Radiation Sensitivity Analysis for Gain-Boosting Amplifiers. IEEE Access, 9, 148421-148432.
dc.identifier.issn2169-3536es
dc.identifier.urihttps://hdl.handle.net/11441/129989
dc.description.abstractThe front-end readout channel consists of a charge sensitive amplifier (CSA) and two different unipolar-shaping circuits to generate pulses suitable for time and energy measurement. The signal processing chain of the single channel is built of two different parallel processing paths: a fast path with a peaking time of 30 ns to obtain the time of arrival for each particle impinging the detector; and a slow path with a peaking time of 400 ns dedicated for low noise amplitude measurements, which is formed by a pole-zero cancellation circuit and a 4th order complex shaper based on a bridged-T architecture. The tunability of the system is accomplished by the discharge time constant of the CSA in order to accommodate various event rates. The readout system has been implemented in a 180 nm CMOS technology with the size of 525 μm x 290 μm . The building blocks use compact gain-boosting techniques based on quasi-floating gate (QFG) transistors achieving accurate energy measurement with good resolution. The high impedance nodes of QFG transistors require a detailed study of sensitivity to single-effect transients (SET). After carrying out this study, this paper proposes a method to select the value of the QFG capacitors, minimizing the area occupancy while maintaining robustness to radiation. The nonlinearity of the CSA-slow-shaper has been found to be less than 1% over a 10–70 fC input charge. The power dissipation of the readout channel is 4.1 mW with a supply voltage of 1.8 V.es
dc.description.sponsorshipMinisterio de Ciencia, Innovación y Universidades PGC2018-095640-B-I00es
dc.description.sponsorshipConsejería de Transformación Económica, Industria, Conocimiento y Universidades P18-FR-3852 y P18-FR-4317es
dc.formatapplication/pdfes
dc.format.extent12 p.es
dc.language.isoenges
dc.publisherInstitute of Electrical and Electronics Engineers Inc.es
dc.relation.ispartofIEEE Access, 9, 148421-148432.
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internacional*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.subjectLow power sensor interface circuitses
dc.subjectAnalog front-end electronicses
dc.subjectSemiconductor detectorses
dc.subjectComplex shaperes
dc.subjectCharge sensitive amplifieres
dc.titleAnalog CMOS Readout Channel for Time and Amplitude Measurements With Radiation Sensitivity Analysis for Gain-Boosting Amplifierses
dc.typeinfo:eu-repo/semantics/articlees
dcterms.identifierhttps://ror.org/03yxnpp24
dc.type.versioninfo:eu-repo/semantics/publishedVersiones
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses
dc.contributor.affiliationUniversidad de Sevilla. Departamento de Ingeniería Electrónicaes
dc.relation.projectIDPGC2018-095640-B-I00es
dc.relation.projectIDP18-FR-3852es
dc.relation.projectIDP18-FR-4317es
dc.relation.publisherversionhttps://ieeexplore.ieee.org/document/9597544es
dc.identifier.doi10.1109/ACCESS.2021.3124644es
dc.contributor.groupUniversidad de Sevilla. TIC 192: Ingeniería Electrónicaes
dc.journaltitleIEEE Accesses
dc.publication.volumen9es
dc.publication.initialPage148421es
dc.publication.endPage148432es

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