Analog CMOS Readout Channel for Time and Amplitude Measurements With Radiation Sensitivity Analysis for Gain-Boosting Amplifiers
Gómez-Galán, Juan Antonio
Márquez Lasso, Fernando J.
Sánchez Raya, Manuel
Hinojo Montero, José María
Muñoz Chavero, Fernando
|Department||Universidad de Sevilla. Departamento de Ingeniería Electrónica|
|Abstract||The front-end readout channel consists of a charge sensitive amplifier (CSA) and two different unipolar-shaping circuits to generate pulses suitable for time and energy measurement. The signal processing chain of the single ...
The front-end readout channel consists of a charge sensitive amplifier (CSA) and two different unipolar-shaping circuits to generate pulses suitable for time and energy measurement. The signal processing chain of the single channel is built of two different parallel processing paths: a fast path with a peaking time of 30 ns to obtain the time of arrival for each particle impinging the detector; and a slow path with a peaking time of 400 ns dedicated for low noise amplitude measurements, which is formed by a pole-zero cancellation circuit and a 4th order complex shaper based on a bridged-T architecture. The tunability of the system is accomplished by the discharge time constant of the CSA in order to accommodate various event rates. The readout system has been implemented in a 180 nm CMOS technology with the size of 525 μm x 290 μm . The building blocks use compact gain-boosting techniques based on quasi-floating gate (QFG) transistors achieving accurate energy measurement with good resolution. The high impedance nodes of QFG transistors require a detailed study of sensitivity to single-effect transients (SET). After carrying out this study, this paper proposes a method to select the value of the QFG capacitors, minimizing the area occupancy while maintaining robustness to radiation. The nonlinearity of the CSA-slow-shaper has been found to be less than 1% over a 10–70 fC input charge. The power dissipation of the readout channel is 4.1 mW with a supply voltage of 1.8 V.
|Citation||Sánchez-Rodríguez, T., Gómez-Galán, J.A., Márquez Lasso, F.J., Sánchez Raya, M., Hinojo Montero, J.M. y Muñoz Chavero, F. (2021). Analog CMOS Readout Channel for Time and Amplitude Measurements With Radiation Sensitivity Analysis for Gain-Boosting Amplifiers. IEEE Access, 9, 148421-148432.|